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參數(shù)資料
| 型號： | TSM4435 |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 30V P-Channel MOSFET |
| 中文描述： | 30V的P通道MOSFET |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 310K |
| 代理商： | TSM4435 |
TSM4435
30V P-Channel MOSFET
1/6
Version: A07
SOP-8
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Application
●
●
DC-DC Conversion
Battery Switch
Ordering Information
Part No.
TSM4435CS RL
Package
SOP-8
Packing
2.5Kpcs / 13” Reel
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
V
DS
V
GS
I
D
I
DM
I
S
Limit
-30
Unit
V
Gate-Source Voltage
Continuous Drain Current
±20
-9.1
V
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a,b
-50
A
-2.1
2.5
A
Ta = 25
o
C
Ta = 75
o
C
Maximum Power Dissipation
P
D
1.6
W
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T
J
+150
o
C
o
C
T
J
, T
STG
- 55 to +150
Thermal Performance
Parameter
Junction to Foot (Drain) Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t
≤
10 sec.
Symbol
R
JF
R
JA
Limit
22
50
Unit
o
C/W
o
C/W
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(m
Ω
)
I
D
(A)
21 @ V
GS
= -10V
-9.1
-30
35 @ V
GS
= -4.5V
-6.9
Block Diagram
P-Channel MOSFET
Pin Definition:
1. Source
2. Source
3. Source
4. Gate
5, 6, 7, 8. Drain
相關PDF資料 |
PDF描述 |
|---|---|
| TSM4435_07 | 30V P-Channel MOSFET |
| TSM4435CS | 30V P-Channel MOSFET |
| TSM4435CSRL | 30V P-Channel MOSFET |
| TSM4835 | 30V P-Channel Enhancement Mode MOSFET |
| TSM4835CS | 30V P-Channel Enhancement Mode MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TSM4435_07 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:30V P-Channel MOSFET |
| TSM4435_08 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:30V P-Channel MOSFET |
| TSM4435B | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:30V P-Channel MOSFET |
| TSM4435BCS RL | 功能描述:MOSFET 30V N Channel Mosfet RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TSM4435BCSRL | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:30V P-Channel MOSFET |
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