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參數(shù)資料
| 型號(hào)： | TSM3900DCX6RF |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 20V Dual N-Channel MOSFET |
| 中文描述： | 20V的雙N溝道MOSFET |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 337K |
| 代理商： | TSM3900DCX6RF |
TSM3900D
20V Dual N-Channel MOSFET
Electrical Specifications
2/6
Version: A07
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
V
GS
= 0V, I
D
= 250uA
V
DS
= V
GS
, I
D
= 250uA
V
GS
= ±8V, V
DS
= 0V
V
DS
= 16V, V
GS
= 0V
V
DS
≥
5V, V
GS
= 4.5V
V
GS
= 4.5V, I
D
= 2.0A
V
GS
= 2.5V, I
D
= 1.5A
V
GS
= 1.8V, I
D
= 1.0A
V
DS
= 5V, I
D
= 2.4A
I
S
= 1.6A, V
GS
= 0V
BV
DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
20
0.65
--
--
5
--
--
--
--
--
--
--
1.2
±100
1.0
--
55
70
110
--
1.1
V
V
nA
uA
A
0.95
--
--
--
45
50
80
5
0.79
Drain-Source On-State Resistance
R
DS(ON)
m
Ω
Forward Transconductance
Diode Forward Voltage
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
a. pulse test: PW
≤
300
μ
S, duty cycle
≤
2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
g
fs
V
SD
S
V
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
--
--
--
--
--
--
3.69
0.70
1.06
427.12
80.56
57
--
--
--
--
--
--
V
DS
= 10V, I
D
= 2.4A,
V
GS
= 4.5V
nC
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
pF
t
d(on)
t
r
t
d(off)
t
f
--
--
--
--
6.16
7.56
16.61
4.07
--
--
--
--
V
DD
= 10V, R
L
= 10
Ω
,
I
D
= 1A, V
GEN
= 4.5V,
R
G
= 6
Ω
nS
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