參數(shù)資料
型號(hào)： TSM3900DCX6RF
廠商： Taiwan Semiconductor Co., Ltd.
英文描述： 20V Dual N-Channel MOSFET
中文描述： 20V的雙N溝道MOSFET
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 337K
代理商： TSM3900DCX6RF
TSM3900D
20V Dual N-Channel MOSFET
1/6
Version: A07
SOT-26
R
DS(on)
(m
Ω
)
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Application
●
●
Load Switch
PA Switch
Ordering Information
Part No.
TSM3900DCX6 RF
Package
SOT-26
Packing
T&R
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
V
DS
V
GS
I
D
I
DM
I
S
Limit
Unit
V
20
Gate-Source Voltage
±8
V
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a,b
2
A
A
8
1.6
A
Ta = 25
o
C
Ta = 70
o
C
2.0
1.3
Maximum Power Dissipation
P
D
W
Operating Junction Temperature
T
J
+150
o
C
o
C
Operating Junction and Storage Temperature Range
T
J
, T
STG
-55 to +150
Thermal Performance
Parameter
Junction to CaseThermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t
≤
5 sec.
Symbol
R
JC
R
JA
Limit
30
80
Unit
o
C/W
o
C/W
PRODUCT SUMMARY
V
DS
(V)
I
D
(A)
55 @ V
GS
= 4.5V
2.0
70 @ V
GS
= 2.5V
1.5
20
110 @ V
GS
= 1.8V
1.0
Block Diagram
Dual N-Channel MOSFET
Pin Definition:
1. Gate 1
2. Source 2
3. Gate 2
6. Drain 1
5. Source 1
4. Drain 2
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