參數(shù)資料
型號： TSM3481CX6RF
廠商： Taiwan Semiconductor Co., Ltd.
英文描述： 30V P-Channel MOSFET
中文描述： 30V的P通道MOSFET
文件頁數(shù)： 1/6頁
文件大?。?/td> 309K
代理商： TSM3481CX6RF
TSM3481
30V P-Channel MOSFET
1/6
Version: A07
SOT-26
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Application
●
●
DC-DC Conversion
Asynchronous Buck Converter
Ordering Information
Part No.
TSM3481CX6 RF
Package
SOP-8
Packing
3Kpcs / 7” Reel
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a,b
Symbol
V
DS
V
GS
I
D
I
DM
I
S
Limit
-30
±20
-5.3
-20
-1.7
2.0
1.3
+150
- 55 to +150
Unit
V
V
A
A
A
Ta = 25
o
C
Ta = 75
o
C
Maximum Power Dissipation
P
D
W
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T
J
o
C
o
C
T
J
, T
STG
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t
≤
10 sec.
Symbol
R
JC
R
JA
Limit
30
80
Unit
o
C/W
o
C/W
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(m
Ω
)
I
D
(A)
48 @ V
GS
= -10V
-5.3
-30
79 @ V
GS
= -4.5V
-4.1
Block Diagram
P-Channel MOSFET
Pin Definition:
1. Drain 6. Drain
2. Drain 5, Drain
3. Gate 4. Source
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