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參數(shù)資料
| 型號(hào)： | TSM35N03 |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | Multi-Color LED; LED Color:Red/Green; Luminous Intensity:20mcd; Viewing Angle:104 ; Forward Current:25mA; Forward Voltage:2.2V; Operating Temperature Range:-30 C to +85 C; Color:Red/Green; Leaded Process Compatible:No RoHS Compliant: No |
| 中文描述： | N溝道增強(qiáng)型MOS管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 132K |
| 代理商： | TSM35N03 |
TSM35N03
1-3
2005/04 rev. A
TSM35N03
Preliminary
N-Channel Enhancement Mode MOSFET
V
DS
= 30V
I
D
= 50A
R
DS (on)
, Vgs @ 10V, Ids @ 30A = 8.5m
R
DS (on)
, Vgs @ 4.5V, Ids @ 30A = 13m
Features
Advanced trench process technology
High Density Cell Design for Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
Specially Designed for DC/DC Converters and Motor
Drivers
Block Diagram
Ordering Information
Part No.
Packing
Package
TSM35N03CP
Tape & Reel
TO-252
Absolute Maximum Rating
(T
A
= 25
o
C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
±20
V
Continuous Drain Current
I
D
50
Pulsed Drain Current
I
DM
350
A
T
A
= 25
o
C
T
A
= 100
o
C
57
W
Maximum Power Dissipation
P
D
23
W/
o
C
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
T
J
, T
STG
-55 to +150
o
C
Single Pulse Drain to Source Avalanche Energy
(V
DD
= 100V, V
GS
=10V, I
AS
=2A, L=10mH, R
G
=25
)
Thermal Performance
E
AS
300
mJ
Parameter
Symbol
Limit
Unit
Lead Temperature (1/8” from case)
T
L
10
S
Junction-to-case Thermal Resistance
R
θ
jc
2.2
Junction to Ambient Thermal Resistance (PCB mounted)
Note: 1. Maximum DC current limited by the package
2. 1-in
2oz Cu PCB board
R
θ
ja
50
o
C/W
Pin assignment:
1. Gate
2. Drain
3. Source
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TSM35N03CP | N-Channel Enhancement Mode MOSFET |
| TSM3900D | 20V Dual N-Channel MOSFET |
| TSM3900DCX6RF | 20V Dual N-Channel MOSFET |
| TSM3911D | 20V Dual P-Channel MOSFET |
| TSM3911DCX6RF | 20V Dual P-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSM35N03_07 | 制造商:TSC 制造商全稱(chēng):Taiwan Semiconductor Company, Ltd 功能描述:25V N-Channel MOSFET |
| TSM35N03_09 | 制造商:TSC 制造商全稱(chēng):Taiwan Semiconductor Company, Ltd 功能描述:25V N-Channel MOSFET |
| TSM35N03CP | 功能描述:MOSFET 25V N channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TSM35N03CP R0 | 制造商:SKMI/Taiwan 功能描述:Trans MOSFET N-CH 25V 35A 3-Pin(2+Tab) TO-252 T/R |
| TSM35N03CP RO | 制造商:SKMI/Taiwan 功能描述:Trans MOSFET N-CH 25V 35A 3-Pin(2+Tab) TO-252 T/R |
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