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參數(shù)資料
| 型號(hào)： | TSDF1220R |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor |
| 中文描述： | 硅NPN平面射頻晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 81K |
| 代理商： | TSDF1220R |
TSDF1220/TSDF1220R/TSDF1220W/TSDF1220RW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 6, 30-Jun-00
1 (6)
Document Number 85066
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise applications such as preamplifiers, mix-
ers and oscillators in analog and digital TV–systems
(e.g., satellite tuners) up to microwave frequencies.
Features
Low power applications
Very low noise figure
High transition frequency f
T
= 12 GHz
13 579
2
1
4
3
94 9279
TSDF1220 Marking: F20
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
95 10831
2
1
4
3
94 9278
TSDF1220R Marking: 20F
Plastic case (SOT 143R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
2
1
3
13 653
4
13 566
TSDF1220W Marking: WF2
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
2
1
3
4
13 566
13 654
TSDF1220RW Marking: W2F
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
9
6
2
40
200
150
Unit
V
V
V
mA
mW
C
C
T
amb
≤
60 C
–65 to +150
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