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參數(shù)資料
| 型號： | TSDF2005W |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | 25 GHz Silicon NPN Planar RF Transistor |
| 中文描述： | 25 GHz的射頻硅NPN平面晶體管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 57K |
| 代理商： | TSDF2005W |
TSDF2005W
Vishay Semiconductors
1 (4)
www.vishay.com
Document Number 85085
Rev. 3, 02–May–02
25 GHz Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low current, low–noise applications, such as in RF
front–ends, in analogue and digital cellular and
cordless phones,in analogue and digital TV systems
(e.g. satellite tuners), in high frequency oscillators up
to 12 GHz, in pagers and radar detectors.
Features
Very low noise figure
Very high power gain
High transition frequency f
T
= 25 GHz
Low feedback capacitance
Emitter pins are thermal leads
1
2
4
3
16712
TSDF2005W Marking: YH2
Plastic case (SOT 343R)
1 = Emitter, 2 = Base, 3 = Emitter, 4 = Collector
Absolute Maximum Ratings
T
amb
= 25
°
C,
unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Junction ambient
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
R
thJA
Value
10
3.5
1.5
12
40
150
Unit
V
V
V
mA
mW
°
C
°
C
K/W
T
amb
132
°
C
–65 to +150
450
on glass fibre printed board
(25 x 20 x 1.5) mm
3
plated with 35
μ
m Cu
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