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參數(shù)資料
| 型號(hào)： | TSDF1250 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor |
| 中文描述： | 硅NPN平面射頻晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 151K |
| 代理商： | TSDF1250 |
TSDF1250/TSDF1250R/TSDF1250W/TSDF1250RW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 5, 08-Jul-99
1 (6)
Document Number 85067
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise applicatins such as power amplifiers,
mixers and oscillators in analogue and digital TV–sys-
tems (e.g. satellite tuners) up to microwave
frequencies.
Features
Low power applications
Very low noise figure
High transition frequency f
T
= 12 GHz
Excellent large signal behaviour
13 579
2
1
4
3
94 9279
TSDF1250 Marking: F50
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
95 10831
2
1
4
3
94 9278
TSDF1250R Marking: 50F
Plastic case (SOT 143R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
2
1
3
13 653
4
13 566
TSDF1250W Marking: WF5
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
2
1
3
4
13 566
13 654
TSDF1250RW Marking: W5F
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
9
6
2
60
200
150
Unit
V
V
V
mA
mW
C
C
T
amb
≤
60 C
–65 to +150
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