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參數(shù)資料
| 型號： | TSD57060-01 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF POWER TRANSISTORS The LdmoSTFAMILY |
| 中文描述： | 射頻功率晶體管LdmoSTFAMILY |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 71K |
| 代理商： | TSD57060-01 |
SD57060-01
RF POWER TRANSISTORS
The LdmoST FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
I
EXCELLENTTHERMAL STABILITY
I
COMMON SOURCE CONFIGURATION
I
P
OUT
= 60 W with 11.5 dB gain @ 945MHz
I
BeO FREE PACKAGE
DESCRIPTION
The SD57060-01is a common source N-Channel
enhancement-modelateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57060-01 is designed for high
gain and broadband performance operating in
common source mode at 28V. It is ideal for base
station applicationsrequiring high linearity.
PIN CONNECTION
January 2000
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25
o
C)
Symbol
V
(BR)DSS
V
GS
I
D
P
DISS
T
j
T
STG
Parameter
Value
65
±
20
7
118
200
-65 to 150
Unit
V
V
A
W
o
C
o
C
Drain Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc= 70
o
C)
Max. Operating Junction Temperature
Storage Temperature
THERMAL DATA
(T
case
= 70
o
C)
R
th(j-c)
R
th(c-s)*
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning340 or equivalent).
Junction-Case Thermal Resistance
Case-Heatsink Thermal Resistance
1.1
0.5
o
C/W
o
C/W
M250
epoxy sealed
ORDER CODE
SD57060-01
BRANDING
TSD57060-01
1. Drain
2. Gate
3.Source
1/8
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