
TSB772S
Low Vcesat PNP Transistor
1/5
Version: A07
TO-92
SOT-89
PRODUCT SUMMARY
BV
CBO
BV
CEO
I
C
V
CE(SAT)
-50V
-50V
-3A
-0.5V @ I
C
/ I
B
= -2A / -200mA
Features
●
●
Low V
CE(SAT)
-0.25 @ I
C
/ I
B
= 2A / 200mA (Typ.)
Complementary part with TSD882S
Structure
●
●
Epitaxial Planar Type
PNP Silicon Transistor
Ordering Information
Part No.
TSD772SCT B0
TSD772SCT A3
TSD772SCY RM
Package
TO-92
TO-92
SOT-89
Packing
1Kpcs / Bulk
2Kpcs / Ammo
1Kpcs / 7” Reel
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
V
CBO
V
CEO
V
EBO
Limit
-50
-50
-5
-3
-7 (note)
0.75
0.625
+150
- 55 to +150
Unit
V
V
V
DC
Pulse
SOT-89
TO-92
Collector Current
I
C
A
Collector Power Dissipation
P
D
W
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: Single pulse, Pw
≤
350us, Duty
≤
2%
T
J
T
STG
o
C
o
C
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Transfer Ratio
Conditions
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(SAT)
*V
BE(SAT)
*h
FE
Min
-50
-50
-5
--
--
--
--
100
Typ
--
--
--
--
--
-0.3
-1
--
Max
--
--
--
-1
-1
-0.5
-2
500
Unit
V
V
V
uA
uA
V
V
I
C
= -50uA, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -50uA, I
C
= 0
V
CB
= -30V, I
E
= 0
V
EB
= 3V, I
C
= 0
I
C
/ I
B
= -2A / -200mA
I
C
/ I
B
= -2A / -200mA
V
CE
= -2V, I
C
= -1A
V
CE
=-5V, I
C
=-100mA,
f=100MHz
V
CB
= -10V, f=1MHz
Transition Frequency
f
T
--
80
--
MHz
Output Capacitance
* Pulse Test: Pulse Width
≤
380uS, Duty Cycle
≤
2%
Cob
--
55
--
pF
Pin Definition:
1. Base
2. Collector
3. Emitter
Pin Definition:
1. Emitter
2. Collector
3. Base