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參數(shù)資料
| 型號(hào)： | TSD57045-01 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF POWER TRANSISTORS The LdmoSTFAMILY |
| 中文描述： | 射頻功率晶體管LdmoSTFAMILY |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 233K |
| 代理商： | TSD57045-01 |
SD57045-01
RF POWER TRANSISTORS
The LdmoST FAMILY
ADVANCE DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
ν
EXCELLENTTHERMAL STABILITY
ν
COMMON SOURCE CONFIGURATION
ν
P
OUT
= 45 W PEP with 13 dB gain @ 945 MHz
ν
BeO FREE PACKAGE
DESCRIPTION
The SD57045-01 is a common source N-Channel
Enhancement-Mode
Lateral
power
transistor
designed
commercial
and
industrial
frequencies up to 1.0 GHz. The SD57045-01 is
designed
for
high
performance operating in common source mode
at 28V. It is ideal for base stations applications
requiring high linearity.
Field-Effect
for
applications
RF
broadband
at
gain
and
broadband
PIN CONNECTION
March 2000
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25
o
C)
Symbol
V
(BR)DSS
V
DGR
V
GS
I
D
P
DISS
T
j
T
STG
Parameter
Value
65
65
±
20
5
93
200
-65 to 200
Unit
V
V
V
A
W
o
C
o
C
Drain Source Voltage
Drain-Gate Voltage (R
GS
= 1M
)
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc= 70
o
C)
Max. Operating Junction Temperature
Storage Temperature
THERMAL DATA
(T
case
= 70
o
C)
R
th(j-c)
R
th(c-s)
* Determined using a flataluminum or copper heatsink with thermal compound applied (Dow Corning340 or equivalent).
Junction-Case Thermal Resistance
Case-Heatsink Thermal Resistance
1.4
0.50
o
C/W
o
C/W
ORDER CODE
SD57045-01
BRANDING
TSD57045-01
1. Drain
2. Gate
3.Source
M250
(Epoxysealed)
1/11
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