1996 Dec 17
10
Philips Semiconductors
Product specification
1.4 GHz I
2
C-bus controlled multimedia
synthesizer
TSA5523M
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling bipolar devices.
Every pin withstands the ESD test in accordance with “MIL-STD-883C category B”(2000 V).
Every pin withstands the EDS test in accordance with Philips Semiconductors Machine Model 0
, 200 pF (200 V).
THERMAL CHARACTERISTICS
CHARACTERISTICS
V
CC1
= 4.5 to 5.5 V; T
amb
=
20 to +85
°
C; see note 1; unless otherwise specified.
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient in free air
120
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
General
V
CC1
I
CC1
V
PORth
supply voltage
supply current
power-on reset threshold
voltage
operating ambient
temperature
RF input frequency
divider ratio
4.5
1.5
22
2.0
5.5
30
V
mA
V
V
CC1
= 5 V
T
amb
= 25
°
C
slope is
6 mV/
°
C
T
amb
20
+85
°
C
f
iRF
N
64
256
1400
32767
MHz
15-bit frequency word
XTAL oscillator
f
XTAL
Z
XTAL
DL
XTAL(p-p)
frequency range
input impedance
drive level on pin XTAL
(peak-to-peak value)
R
XTAL
= 25 to 200
f = 4 MHz
series capacitor = 18 pF;
crystal Philips
4333 1430 4881
3.2
600
4.0
1200
110
4.48
MHz
mV
Prescaler
V
RFin
input level
V
CC1
= 4.5 to 5.5 V;
T
amb
=
20 to +85
°
C;
see Fig.4
f = 80 to 150 MHz
f = 150 to 1000 MHz
f = 1000 to 1400 MHz
see Fig.5
25
28
26
+3
+3
+3
dBm
dBm
dBm
Z
iRF
input impedance