參數(shù)資料
型號： TS68EN360VR25L
廠商： ATMEL CORP
元件分類： 微控制器/微處理器
英文描述： 32-bitQuad Integrated Communication Controller
中文描述： 32-BIT, 25 MHz, RISC PROCESSOR, CPGA241
封裝： CERAMIC, PGA-241
文件頁數(shù)： 76/82頁
文件大小： 874K
代理商： TS68EN360VR25L
76
TS68EN360
2113A–HIREL–03/02
SoftwareCompatibilityIssues
ThefollowinglistsummarizesthemajorsoftwaredifferencesbetweentheTS68302and
theQUICC:
SincetheCPU32+isasupersetofthe68000instructionset,allpreviouslywritten
codewillrun.However,ifsuchcodeisaccessingtheTS68302peripherals,itwill
requiresomemodification.
TheQUICCcontainsan8-Kbyteblockofmemoryasopposedtoa4-Kbyteblockon
theTS68302.Theregisteraddresseswithinthatmemorymaparedifferent.
ThecodeusedtoinitializethesystemintegrationfeaturesoftheTS68302hastobe
modifiedtowritethecorrespondingfeaturesontheQUICCSIM60.
Asmuchaspossible,QUICCCPMfeaturesweremadeidenticaltothoseofthe
TS68302CP.Themostimportantbenefitisthatthecodeflow(ifnotthecodeitself)
willporteasilyfromtheTS68302totheQUICC.Thenuanceslearnedfromthe
TS68302willstillbeusefulintheQUICC.
AlthoughtheregistersusedtoinitializetheQUICCCPMarenew(forexample,the
SCMontheTS68302isreplacedwiththeGSMRandPSMRontheQUICC),most
registersretaintheiroriginalpurposesuchastheSCCevent,SCCmask,SCC
status,andcommandregisters.TheparameterRAMoftheSCCsisverysimilar,
andmostparameterRAMregisternamesandusageareretained.Moreimportantly,
thebasicstructureofabufferdescriptor(BD)ontheQUICCisidenticaltothatofthe
TS68302,exceptforafewnewbitfunctionsthatwereadded.(Inafewcases,abit
inaBDstatuswordhadtobeshifted.)
WhenportingcodefromtheTS68302CPtotheQUICCCPM,thesoftwarewriter
mayfindthattheQUICChasnewoptionstosimplifywhatusedtobeamorecode-
intensiveprocess.Forspecificexamples,seetheINITTXANDRXPARAMETERS,
GRACEFULSTOPTRANSMIT,andCLOSEBDcommands.
Preparationfor
Delivery
Packaging
MicrocircuitsarepreparedfordeliveryinaccordancewithMIL-PRF-38535orAtmel
standards.
CertificateofCompliance
Atmeloffersacertificateofcomplianceswitheachshipmentofparts,affirmingtheprod-
uctsareincomplianceeitherwithMIL-STD-883orAtmelstandardandguarantyingthe
parametersnottestedattemperatureextremesfortheentiretemperaturerange.
Handling
MOSdevicesmustbehandledwithcertainprecautionstoavoiddamageduetoaccu-
mulationofstaticcharge.Inputprotectiondeviceshavebeendesignedinthechipto
minimizetheeffectofthisstaticbuildup.However,thefollowinghandlingpracticesare
recommended:
a) Devicesshouldbehandledonbencheswithconductiveandgroundedsurfaces.
b) Groundtestequipment,toolsandoperator.
c) Donothandledevicesbytheleads.
d) Storedevicesinconductivefoamorcarriers.
e) Avoiduseofplastic,rubber,orsilkinMOSareas.
f) Maintainrelativehumidityabove50%ifpractical.
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