參數(shù)資料
型號： TPS3619
廠商： Texas Instruments, Inc.
英文描述： BACKUP-BATTERY SUPERVISORS FOR RAM RETENTION(用于RAM數(shù)據(jù)保持的后備電源監(jiān)控器)
中文描述： 備用電池RAM保持監(jiān)督員（用于內(nèi)存數(shù)據(jù)保持的后備電源監(jiān)控器）
文件頁數(shù)： 7/13頁
文件大?。?/td> 249K
代理商： TPS3619
SLVS387B
–
APRIL 2001
–
REVISED DECEMBER 2002
7
www.ti.com
electrical characteristics over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VDD = 1.8 V,
VDD = 3.3 V,
VDD = 5 V,
VDD = 1.8 V,
VDD = 3.3 V,
VDD = 5 V,
VDD = 1.8 V,
VDD = 3.3 V,
VDD = 5 V,
IOL = 20
μ
A,
VBAT > 1.1 V or VDD > 1.1 V
IOUT = 8.5 mA,
VBAT = 0 V
IOUT = 125 mA,
VBAT = 0 V
IOUT = 200 mA,
VBAT = 0 V
IOUT = 0.5 mA,
VBAT = 1.5 V
IOUT = 7.5 mA,
VBAT = 3.3 V
VDD = 5 V
VDD = 3.3 V
MIN
TYP
MAX
UNIT
IOH =
–
400
μ
A
IOH =
–
2 mA
IOH =
–
3 mA
IOH =
–
20
μ
A
IOH =
–
80
μ
A
IOH =
–
120
μ
A
IOL =
–
400
μ
A
IOL = 2 mA
IOL = 3 mA
VDD
–
0.2 V
VDD
–
0.4 V
VDD
–
0.4 V
VDD
–
0.3 V
VDD
–
0.4 V
VDD
–
0.4 V
RESET
V
VOH
High le el o tp t oltage
High-level output voltage
PFO
V
RESET
PFO
0.2
VOL
Low-level output voltage
Low level out ut voltage
0.4
V
0.4
Vres
Powerup reset voltage (see Note 2)
0.4
V
VDD = 1.8 V,
VDD
–
50 V
Normal mode
VDD = 3.3 V,
VDD
–
150 V
V
VOUT
VDD = 5 V,
VDD
–
200 V
Battery backup mode
Battery-backup mode
VDD = 0 V,
VBAT
–
20 mV
V
VBAT
–
113 mV
rDS(on)
VDD to VOUT on-resistance
VBAT to VOUT on-resistance
0.6
1
8
15
VIT
–
Negative-going input
threshold voltage (see
Note 3)
TPS3619-33
2.88
2.93
3
TPS3619-50
TA =
–
TA 40 C to 85 C
4.46
4.55
4.64
V
VPFI
PFI
1.13
1.15
20
1.17
1.65 V
<
VIT
<
2.5 V
2.5 V
<
VIT
<
3.5 V
3.5 V
<
VIT
<
5.5 V
VIT
40
Vh s
Vhys
Hysteresis
60
mV
PFI
12
VBSW (see
Note 4)
VDD = 1.8 V
55
IIH
IIL
II
High-level input current
MR
MR = 0.7 x VDD
MR = 0 V
VDD = 5 V
–
33
–
76
Low-level input current
–
110
–
255
μ
A
Input current
PFI
–
25
25
nA
VDD = 1.8 V
VDD = 3.3 V
VDD = 5 V
–
0.3
IOS
Short-circuit current
Short circuit current
PFO
PFO = 0 V
PFO 0 V
–
1.1
mA
–
2.4
IDD
VDD supply current
VOUT = VDD
VOUT = VBAT
VOUT = VDD
VOUT = VBAT
VI = 0 V to 5 V
40
40
μ
A
I(BAT)
VBAT supply current
–
0.1
0.1
0.5
μ
A
Ci
Input capacitance
2. The lowest supply voltage at which RESET becomes active. tr,VDD
≥
15
μ
s/V
3. To ensure the best stability of the threshold voltage, a bypass capacitor (ceramic, 0.1
μ
F) should be placed near to the supply
terminals.
4. For VDD < 1.6 V, VOUT switches to VBAT regardless of VBAT
5
pF
NOTES:
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TPS3619-33 制造商:TI 制造商全稱:Texas Instruments 功能描述:備份電池監(jiān)督員保留內(nèi)存
TPS3619-33DGK 功能描述:監(jiān)控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel
TPS3619-33DGK 制造商:Texas Instruments 功能描述:IC's
TPS3619-33DGKG4 功能描述:監(jiān)控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel
TPS3619-33DGKR 功能描述:監(jiān)控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel
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