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參數(shù)資料
| 型號： | TPS3619 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | BACKUP-BATTERY SUPERVISORS FOR RAM RETENTION(用于RAM數(shù)據(jù)保持的后備電源監(jiān)控器) |
| 中文描述： | 備用電池RAM保持監(jiān)督員（用于內(nèi)存數(shù)據(jù)保持的后備電源監(jiān)控器） |
| 文件頁數(shù)： | 5/13頁 |
| 文件大小： | 249K |
| 代理商： | TPS3619 |
SLVS387B
–
APRIL 2001
–
REVISED DECEMBER 2002
5
www.ti.com
detailed description (continued)
power-fail comparator (PFI and PFO)
An additional comparator is provided to monitor voltages other than the nominal supply voltage. The
power-fail-input (PFI) is compared with an internal voltage reference of 1.15 V. If the input voltage falls below
the power-fail threshold V
IT(PFI)
of typical 1.15 V, the power-fail output (PFO) goes low. If V
IT(PFI)
goes above
V
(PFI)
, plus about 12-mV hysteresis, the output returns to high. By connecting two external resistors, it is
possible to supervise any voltages above V
(PFI)
. The sum of both resistors should be about 1 M
, to minimize
power consumption and also to assure that the current in the PFI pin can be ignored compared with the current
through the resistor network. The tolerance of the external resistors should be not more than 1% to ensure
minimal variation of sensed voltage. If the power-fail comparator is unused, PFI should be connected to ground
and PFO
left unconnected.
backup-battery switchover
In case of a brownout or power failure, it may be necessary to preserve the contents of RAM. If a backup-battery
is installed at V
BAT
, the device automatically switches the connected RAM to backup power when V
DD
fails. In
order to allow the backup-battery (e.g., a 3.6-V lithium cell) to have a higher voltage than V
DD
, these supervisors
do not connect V
BAT
to V
OUT
when V
BAT
is greater than V
DD
. V
BAT
only connects to V
OUT
(through a 15-
switch)
when V
DD
falls below V
IT
and V
BAT
is greater than V
DD
. When V
DD
recovers, switchover is deferred either until
V
DD
crosses V
BAT
, or until V
DD
rises above the reset threshold V
IT
. V
OUT
connects to V
DD
through a 1-
(max)
PMOS switch when V
DD
crosses the reset threshold.
FUNCTION TABLE
VDD > VBAT
1
VDD > VIT
1
VOUT
VDD
VDD
VDD
VBAT
1
0
0
1
0
0
Undefined
VBSW Hysteresis
VBAT Mode
VDD Mode
VIT Hysteresis
–
–
V
VBAT
–
Backup-Battery Supply Voltage
–
V
Figure 1. Normal Supply Voltage vs Backup-Battery Supply Voltage
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TPS3619-33 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:備份電池監(jiān)督員保留內(nèi)存 |
| TPS3619-33DGK | 功能描述:監(jiān)控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| TPS3619-33DGK | 制造商:Texas Instruments 功能描述:IC's |
| TPS3619-33DGKG4 | 功能描述:監(jiān)控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| TPS3619-33DGKR | 功能描述:監(jiān)控電路 Battery-Backup for RAM Retention RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
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