型號(hào): | TPCP8BA1 |
元件分類: | 小信號(hào)晶體管 |
英文描述: | 1300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
文件頁數(shù): | 4/4頁 |
文件大?。?/td> | 210K |
代理商: | TPCP8BA1 |
相關(guān)PDF資料 |
PDF描述 |
---|---|
TPD11FGPCES0 | PUSHBUTTON SWITCH, SPDT, MOMENTARY, THROUGH HOLE-STRAIGHT |
TPD21RG-PC2 | PUSHBUTTON SWITCH, DPDT, MOMENTARY, 0.02A, 20VDC, THROUGH HOLE-STRAIGHT |
TPD21MG-PC0 | PUSHBUTTON SWITCH, DPST, LATCHED, 0.02A, 20VDC, THROUGH HOLE-STRAIGHT |
TPD21RG-RA6 | PUSHBUTTON SWITCH, DPDT, MOMENTARY, 0.02A, 20VDC, THROUGH HOLE-RIGHT ANGLE |
TPF11CGPC2 | PUSHBUTTON SWITCH, SPST, MOMENTARY, 0.02A, 20VDC, THROUGH HOLE-STRAIGHT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
---|---|
TPCP8F01 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type |
TPCP8F01(TE85L,F) | 功能描述:MOSFET Transistr PNP 30V 3A MOSFET Nch 20V .1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
TPCP8F01(TE85L,F,M | 功能描述:MOSFET Transistor PNP 20V, 3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
TPCP8H01 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type |
TPCP8H02 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type |