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參數(shù)資料
| 型號： | TPCP8BA1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 210K |
| 代理商： | TPCP8BA1 |
TPCP8BA1
Silicon P Channel MOS Type (U-MOS-
II
) / Silicon Epitaxial Schottky Barrier Diode
TPCP8BA1
DC-DC Converter
Low R
DS (ON)
and Low V
F
Maximum Ratings
(Ta
=
25°C) MOSFET
Combined Pch MOSFET and Schottky Diode into one Package.
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
20
V
Gate-Source voltage
V
GSS
±
12
V
DC
I
D
1.3
Drain current
Pulse
I
DP
(Note 2)
2.6
A
Drain power dissipation
P
D
(Note 1)
1.0
W
Channel temperature
T
ch
150
°
C
Maximum Ratings
(Ta
=
25°C) SCHOTTKY DIODE
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V
RM
30
V
Reverse voltage
V
R
25
V
Average forward current
I
O
0.7
A
Peak one cycle surge forward current
(non-repetitive)
I
FSM
4 (50 Hz)
A
Junction temperature
T
j
125
°
C
: mm
JEDEC
JEITA
TOSHIBA TOSHIBA
Weight: mg (typ)
1:Anode
2:N/C
3:Source
4:Gate
5,6:Drain
7,8:Cathode
TENTATIVE
Maximum Ratings
(Ta
=
25°C) MOSFET, DIODE COMMON
Characteristics
Symbol
Rating
Unit
Storage temperature
T
stg
55~125
°
C
Operating temperature
T
opr
(Note 3)
40~85
°
C
Note 1: Mounted on FR4 board
(25.4 mm
×
25.4 mm
×
1.6 t, Cu pad: 645 mm
2
)
Note 2: The pulse width limited by max channel temperature.
Note 3: Operating temperature limited by max channel temperature and max junction temperature.
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the
environment is protected against electrostatic discharge. Operators should wear anti-static clothing and use
containers and other objects that are made of anti-static materials.
The Channel-to-Ambient thermal resistance R
th (ch-a)
and the drain power dissipation P
D
vary according to
the board material, board area, board thickness and pad area. When using this device, please take heat
dissipation fully into account.
2003-12-19
1
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TPCP8F01 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type |
| TPCP8F01(TE85L,F) | 功能描述:MOSFET Transistr PNP 30V 3A MOSFET Nch 20V .1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPCP8F01(TE85L,F,M | 功能描述:MOSFET Transistor PNP 20V, 3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPCP8H01 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type |
| TPCP8H02 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type |
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