參數(shù)資料
型號: TPCP8BA1
元件分類: 小信號晶體管
英文描述: 1300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數(shù): 3/4頁
文件大?。?/td> 210K
代理商: TPCP8BA1
TPCP8BA1
Schottky Diode
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
V
F (1)
I
F
=
0.5 A
0.36
0.41
V
Forward voltage
V
F (2)
I
F
=
0.7 A
0.40
0.45
V
Reverse current
I
R
V
R
=
10V
100
μ
A
Total capacitance
C
T
V
R
=
10 V, f
=
1 MHz
20
pF
2003-12-19
3
相關(guān)PDF資料
PDF描述
TPD11FGPCES0 PUSHBUTTON SWITCH, SPDT, MOMENTARY, THROUGH HOLE-STRAIGHT
TPD21RG-PC2 PUSHBUTTON SWITCH, DPDT, MOMENTARY, 0.02A, 20VDC, THROUGH HOLE-STRAIGHT
TPD21MG-PC0 PUSHBUTTON SWITCH, DPST, LATCHED, 0.02A, 20VDC, THROUGH HOLE-STRAIGHT
TPD21RG-RA6 PUSHBUTTON SWITCH, DPDT, MOMENTARY, 0.02A, 20VDC, THROUGH HOLE-RIGHT ANGLE
TPF11CGPC2 PUSHBUTTON SWITCH, SPST, MOMENTARY, 0.02A, 20VDC, THROUGH HOLE-STRAIGHT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TPCP8F01 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type
TPCP8F01(TE85L,F) 功能描述:MOSFET Transistr PNP 30V 3A MOSFET Nch 20V .1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TPCP8F01(TE85L,F,M 功能描述:MOSFET Transistor PNP 20V, 3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TPCP8H01 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
TPCP8H02 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type