參數(shù)資料
型號(hào)： TPCP8402
廠商： Toshiba Corporation
英文描述： TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
中文描述： 東芝場(chǎng)效應(yīng)晶體管硅P，?頻道馬鞍山型（U型馬鞍山四/ U型馬鞍山三）
文件頁(yè)數(shù)： 3/6頁(yè)
文件大小： 162K
代理商： TPCP8402
TPCP8402
2003-09-26
3
P-ch
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
±
16 V, V
DS
=
0 V
V
DS
=
30 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
20 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
4.5 V, I
D
=
1.7 A
V
GS
=
10 V, I
D
=
1.7 A
V
DS
=
10 V, I
D
=
1.7 A
±
10
μ
A
Drain cut-off current
I
DSS
10
μ
A
V
(BR) DSS
30
Drain-source breakdown voltage
V
(BR) DSX
15
V
Gate threshold voltage
V
th
0.8
2.0
V
80
105
Drain-source ON resistance
R
DS (ON)
60
72
m
Forward transfer admittance
|Y
fs
|
3.0
6.0
S
Input capacitance
C
iss
600
Reverse transfer capacitance
C
rss
60
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
70
pF
Rise time
t
r
5.3
Turn-on time
t
on
12
Fall time
t
f
8.4
Switching time
Turn-off time
t
off
Duty
<
1%, t
w
=
10
μ
s
34
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
14
Gate-source charge 1
Q
gs1
1.4
Gate-drain (“miller”) charge
Q
gd
V
DD
～
24 V, V
GS
=
10 V,
I
D
=
3.4 A
2.7
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse (Note 1)
I
DRP
13.6
A
Forward voltage (diode)
V
DSF
I
DR
=
3.4 A, V
GS
=
0 V
1.2
V
R
L
=
V
DD
～
15 V
10
V
V
GS
0 V
4
I
D
=
1.7 A
V
OUT
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