- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄385945 > TPCP8402 (Toshiba Corporation) TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) PDF資料下載
參數(shù)資料
| 型號(hào)： | TPCP8402 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) |
| 中文描述： | 東芝場(chǎng)效應(yīng)晶體管硅P，?頻道馬鞍山型（U型馬鞍山四/ U型馬鞍山三） |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 162K |
| 代理商： | TPCP8402 |
TPCP8402
2003-09-26
1
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
TPCP8402
Portable Equipment Applications
Mortor Drive Applications
DC-DC Converter Applications
Low drain-source ON resistance
: P Channel R
DS
(ON)
= 60 m
(typ.)
N Channel R
DS
(ON)
= 38 m
(typ.)
High forward transfer admittance
: P Channel |Y
fs
| = 6.0 S (typ.)
N Channel |Y
fs
| = 7.0 S (typ.)
Low leakage current
: P Channel I
DSS
=
1
0 μA (V
DS
=
30 V)
N Channel I
DSS
=
1
0 μA (V
DS
= 30 V)
Enhancement
mode
: P Channel V
th
=
0.8 to
2.0 V (V
DS
=
1
0 V, I
D
=
1
mA)
N Channel V
th
=
1
.3 to 2.5 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
30
30
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
30
30
V
Gate-source voltage
V
GSS
±
20
±
20
V
DC (Note 1)
I
D
3.4
4.2
Drain current
Pulse (Note 1)
I
DP
13.6
16.8
A
Single-device operation
(Note 3a)
P
D (1)
1.48
1.48
Drain power
dissipation
(t
=
5 s)
(Note 2a)
Single-device value at
dual operation(Note 3b)
P
D (2)
1.23
1.23
Single-device operation
(Note 3a)
P
D (1)
0.58
0.58
Drain power
dissipation
(t
=
5 s)
(Note 2b)
Single-device value at
dual operation(Note 3b)
P
D (2)
0.36
0.36
W
Single pulse avalanche energy(Note 4)
E
AS
0.75
2.86
mJ
Avalanche current
I
AR
1.7
2.1
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
E
AR
0.12
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6), please
refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: 0.017 g (typ.)
Circuit Configuration
Marking (Note 6)
1
2
3
4
Source
1
Gate
1
Source2
Gate2
Note 7
5
6
7
8
Drain2
Drain2
Drain
1
Drain
1
1
2
3
4
8
7
6
5
8402
1
2 3 4
8 7 6 5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TPCS8104 | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type |
| TPCS8204 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) |
| TPCS8210 | SILICON N CHANNEL MOS TYPE LITHIUM BATTERY APPLICATIONS |
| TPCS8211 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) |
| TPCS8212 | Silicon N Channel MOS Type (U-MOSIII) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TPCP8402(TE85L,F) | 功能描述:MOSFET N-Ch P-Ch 30V 4.2A -30V -3.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPCP8402(TE85L,F,M | 功能描述:MOSFET MOSFET N-Ch P-Ch 30V 4.2 3.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPCP8402_07 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) |
| TPCP8404 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MO/U-MOS) |
| TPCP8405 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Cell Phones Motor Drivers |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。