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參數(shù)資料
| 型號： | TPCS8211 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) |
| 中文描述： | 東芝場效應(yīng)晶體管硅?頻道馬鞍山型（U型MOSIII） |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 224K |
| 代理商： | TPCS8211 |
TPCS8211
2003-02-20
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPCS8211
Lithium Ion Battery Applications
Notebook PC Applications
Portable Machines and Tools
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 16 m
(typ.)
High forward transfer admittance: |Y
fs
| = 11 S (typ.)
Low leakage current: I
DSS
= 10 μA (max) (V
DS
= 20 V)
Enhancement-mode: V
th
= 0.5~1.2 V (V
DS
= 10 V, I
D
= 200 μA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
20
V
Drain-gate voltage (R
GS
20 k )
V
DGR
20
V
Gate-source voltage
V
GSS
12
V
DC
(Note 1)
I
D
6
Drain current
Pulse
(Note 1)
I
DP
24
A
Single-device
operation (Note 3a)
P
D (1)
1.1
Drain power
dissipation
(t 10 s)
(Note 2a)
Single-device value
at dual operation
(Note 3b)
P
D (2)
0.75
W
Single-device
operation (Note 3a)
P
D (1)
0.6
Drain power
dissipation
(t 10 s)
(Note 2b)
Single-device value
at dual operation
(Note 3b)
P
D (2)
0.35
W
Single pulse avalanche energy
(Note 4)
E
AS
46.8
mJ
Avalanche current
I
AR
6
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
E
AR
0.075
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3R1E
Weight: 0.035 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
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| TPCS8211(TE12L,Q,M | 功能描述:MOSFET N-ch 20V 6A 0.024 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPCS8211_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications |
| TPCS8212 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type (U-MOSIII) |
| TPCS8212(TE12L,Q,M | 功能描述:MOSFET N-ch 20V 6A 0.024 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPCS8212_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Lithium Ion Battery Applications |
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