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參數(shù)資料
| 型號： | TPCS8211 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) |
| 中文描述： | 東芝場效應晶體管硅?頻道馬鞍山型（U型MOSIII） |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 224K |
| 代理商： | TPCS8211 |
TPCS8211
2003-02-20
3
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
10 V, V
DS
0 V
10
A
Drain cut-OFF current
I
DSS
V
DS
20 V, V
GS
0 V
10
A
V
(BR) DSS
I
D
10 mA, V
GS
0 V
20
Drain-source breakdown voltage
V
(BR) DSX
I
D
10 mA, V
GS
12 V
8
V
Gate threshold voltage
V
th
V
DS
10 V, I
D
200 A
0.5
1.2
V
V
GS
2.0 V, I
D
4.2 A
26
45
V
GS
2.5 V, I
D
4.2 A
21
29
Drain-source ON resistance
R
DS (ON)
V
GS
4.0 V, I
D
4.8 A
16
24
m
Forward transfer admittance
|Y
fs
|
V
DS
10 V, I
D
3.0 A
5.5
11
S
Input capacitance
C
iss
1590
Reverse transfer capacitance
C
rss
180
Output capacitance
C
oss
V
DS
10 V, V
GS
0 V, f 1 MHz
200
pF
Rise time
t
r
6.4
Turn-ON time
t
on
22
Fall time
t
f
10
Switching time
Turn-OFF time
t
off
Duty
1%, t
w
10 s
42
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
20
Gate-source charge 1
Q
gs1
3.5
Gate-drain (“miller”) charge
Q
gd
V
DD
16 V, V
GS
5 V, I
D
6 A
4.5
nC
Source-Drain Ratings and Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse (Note 1)
I
DRP
24
A
Forward voltage (diode)
V
DSF
I
DR
6 A, V
GS
0 V
1.2
V
R
L
V
DD
10 V
0 V
V
GS
5 V
4
I
D
3 A
V
OUT
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TPCS8211(TE12L,Q,M | 功能描述:MOSFET N-ch 20V 6A 0.024 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPCS8211_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications |
| TPCS8212 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type (U-MOSIII) |
| TPCS8212(TE12L,Q,M | 功能描述:MOSFET N-ch 20V 6A 0.024 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPCS8212_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Lithium Ion Battery Applications |
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