參數(shù)資料
型號(hào): TN0104
廠商: ELAN Microelctronics Corp .
英文描述: N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓40V,低門限1.6V,N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管)
中文描述: N溝道增強(qiáng)型場(chǎng)效應(yīng)管垂直的DMOS(40V的擊穿電壓,1.6V的低門限,?溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管)
文件頁數(shù): 4/4頁
文件大?。?/td> 45K
代理商: TN0104
7-34
Gate Drive Dynamic Characteristics
Q (nanocoulombs)
V
G
(
T
j
G
V
(
D
R
(
V
DS
(th)
and R
Variation with Temperature
C)
°
(
On-Resistance vs. Drain Current
(amperes)
D
I
(
D
R
Variation with Temperature
DSS
D
B
(
C)
°
(
T
j
Transfer Characteristics
V
GS
(volts)
I
D
Capacitance vs. Drain-to-Source Voltage
100
C
V
DS
(volts)
BV
0
10
20
30
40
75
50
25
0
2
4
6
8
10
3.0
2.4
1.8
1.2
0.6
-50
0
50
100
150
1.3
1.2
1.1
1.0
0.9
0.8
10
8
6
4
2
0
0
2
1
1.4
1.2
1.0
0.8
0.6
0.4
1.4
1.2
1.0
0.8
0.6
0.4
10
8
6
4
2
0
0.5
0.65
0.8
0.95
1.1
1.25
-50
0
50
100
150
55pF
V
DS
= 10V
V
GS
= 5V
V
GS
= 10V
T
A
= -55
C
°
f = 1MHz
C
ISS
C
OSS
C
RSS
40V
25
C
°
125
C
°
0
V
DS
= 25V
50pF
V
(th)
@ 0.5mA
R
DS(ON)
@ 5V, 0.25A
0
Typical Performance Curves
TN0104
相關(guān)PDF資料
PDF描述
TN0104 N-Channel Enhancement-Mode Vertical DMOS FETs
TN0104N3 CONNECTOR ACCESSORY
TN0104N8 N-Channel Enhancement-Mode Vertical DMOS FETs
TN0104ND CONNECTOR ACCESSORY
TN0106 N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TN0104N3 功能描述:MOSFET 40V 1.8Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TN0104N3-G 功能描述:MOSFET 40V 1.8Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TN0104N3-G P002 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
TN0104N3-G P003 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
TN0104N3-G P005 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET