參數(shù)資料
型號: TN0104
廠商: ELAN Microelctronics Corp .
英文描述: N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓40V,低門限1.6V,N溝道增強型垂直DMOS結構場效應管)
中文描述: N溝道增強型場效應管垂直的DMOS(40V的擊穿電壓,1.6V的低門限,?溝道增強型垂直的DMOS結構場效應管)
文件頁數(shù): 3/4頁
文件大?。?/td> 45K
代理商: TN0104
7-33
7
Typical Performance Curves
Output Characteristics
3.75
3.0
2.25
1.5
0.75
0
0
10
20
V
DS
(volts)
30
50
40
I
D
Saturation Characteristics
3.75
3.0
2.25
1.5
0.75
0
0
2
4
6
10
8
V
DS
(volts)
I
D
Maximum Rated Safe Operating Area
0.1
100
10
1
0.1
1.0
10
0.01
V
DS
(volts)
I
D
Thermal Response Characteristics
T
1.0
0.8
0.6
0.4
0.2
0
0.001
10
0.01
0.1
1
t
p
(seconds)
Transconductance vs. Drain Current
0.75
0.60
0.45
0.30
0.15
0
0
2.5
0.5
1.0
1.5
2.0
G
F
(
I
D
(amperes)
Power Dissipation vs. Case Temperature
0
150
100
50
5
4
3
2
1
125
75
°
(
25
T
C
C)
D
P
TO-92
T
= -55
A
C
°
T
= 25
A
C
°
T
A
= 125 C
6V
4V
2V
0
TO-243AA (DC)
(TA = 25
°
C)
8V
6V
2V
= -25V
V
DS
= 25V
VGS = 10V
4V
VGS = 10V
8V
TO-243AA
(TA = 25
°
C)
TO-39 (DC)
TO-92 (DC)
TO-243AA
T
A
= 25
°
C
P
D
= 1.6W
TO-92
P
D
= 1W
T
C
= 25
°
C
TN0104
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TN0104 N-Channel Enhancement-Mode Vertical DMOS FETs
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