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參數(shù)資料
| 型號： | TN0104 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓40V，低門限1.6V，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
| 中文描述： | N溝道增強(qiáng)型場效應(yīng)管垂直的DMOS（40V的擊穿電壓，1.6V的低門限，?溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場效應(yīng)管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 45K |
| 代理商： | TN0104 |
7-32
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
40
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
0.6
1.6
-5.0
100
V
V
GS
= V
DS
, I
D
= 500
μ
A
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
=0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 3V, V
DS
= 20V
V
GS
= 5V, V
DS
= 20V
V
GS
= 10V, V
DS
= 20V
V
GS
= 3V, I
D
= 50mA
V
GS
= 5V, I
D
= 250mA
V
GS
= 10V, I
D
= 1A
V
GS
= 10V, I
D
= 1A
V
GS
=10V, I
D
= 1A,
V
DS
= 20V, I
D
= 0.5A
-3.8
0.1
mV/
°
C
nA
μ
A
1
I
D(ON)
ON-State Drain Current
0.35
1.1
2.6
5.0
2.3
1.5
0.5
2.0
R
DS(ON)
2.5
1.8
2.0
1.0
TO-92
TO-243AA
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward
0.7
0.45
%/
°
C
0.34
70
50
15
5.0
8.0
9.0
8.0
1.8
2.0
pF
3.0
7.0
6.0
5.0
1.2
TO-92
TO-243AA
V
GS
= 0V, I
SD
= 1.0A
V
GS
= 0V, I
SD
= 0.5A
V
GS
= 0V, I
SD
= 1A
t
rr
Reverse Recovery Time
300
ns
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Thermal Characteristics
Package
I
D
(continuous)*
V
V
GS
= 0V, I
D
= 1.0mA
Drain-to-Source
Breakdown Voltage
100
μ
A
A
Static Drain-to-Source
ON-State Resistance
All Packages
V
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Voltage Drop
ns
V
DD
= 20V, I
D
= 1A
R
GEN
= 25
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1.0W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
I
DRM
TO-92
0.80A
2.40A
0.80A
2.40A
TO-243AA
*
I
D
(continuous) is limited by max rated T
.
T
A
= 25
°
C. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Signficant P
D
increase possible on ceramic substrate.
1.40A
2.90A
1.6W
15
78
1.40A
2.90A
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Switching Waveforms and Test Circuit
V
GS
= 0V, V
DS
= 20V
f = 1 MHz
TN0104
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