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參數資料
| 型號： | TMP86FH09ANG |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 2.5 to 2.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 |
| 中文描述： | 8位微控制器 |
| 文件頁數： | 148/200頁 |
| 文件大?。?/td> | 1459K |
| 代理商： | TMP86FH09ANG |
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Page 138
14. Flash Memory
14.2 Command Sequence
TMP86FH09ANG
14.2 Command Sequence
The command sequence in the MCU and the serial PROM modes consists of six commands (JEDEC compatible),
as shown in Table 14-1. Addresses specified in the command sequence are recognized with the lower 12 bits
(excluding BA, SA, and FF7FH used for read protection). The upper 4 bits are used to specify the flash memory
area,
Note 1: Set the address and data to be written.
Note 2: The area to be erased is specified with the upper 4 bits of the address.
14.2.1 Byte Program
This command writes the flash memory for each byte unit. The addresses and data to be written are specified
in the 4th bus write cycle. Each byte can be programmed in a maximum of 40
μ
s. The next command sequence
cannot be executed until the write operation is completed. To check the completion of the write operation, per-
form read operations repeatedly until the same data is read twice from the same address in the flash memory.
During the write operation, any consecutive attempts to read from the same address is reversed bit 6 of the data
(toggling between 0 and 1).
Note:To rewrite data to Flash memory addresses at which data (including FFH) is already written, make sure to
erase the existing data by "sector erase" or "chip erase" before rewriting data.
14.2.2 Sector Erase (4-kbyte Erase)
This command erases the flash memory in units of 4 kbytes. The flash memory area to be erased is specified
by the upper 4 bits of the 6th bus write cycle address. For example, to erase 4 kbytes from F000H to FFFFH,
specify one of the addresses in F000H-FFFFH as the 6th bus write cycle. The sector erase command is effec-
tive only in the MCU and serial PROM modes, and it cannot be used in the parallel PROM mode.
A maximum of 30 ms is required to erase 4 kbytes. The next command sequence cannot be executed until the
erase operation is completed. To check the completion of the erase operation, perform read operations repeat-
edly for data polling until the same data is read twice from the same address in the flash memory. During the
erase operation, any consecutive attempts to read from the same address is reversed bit 6 of the data (toggling
between 0 and 1).
Table 14-1 Command Sequence
Command
Sequence
1st Bus Write
Cycle
2nd Bus Write
Cycle
3rd Bus Write
Cycle
4th Bus Write
Cycle
5th Bus Write
Cycle
6th Bus Write
Cycle
Address
Data
Address
Data
Address
Data
Address
Data
Address
Data
Address
Data
1
Byte program
555H
AAH
AAAH
55H
555H
A0H
BA
(Note 1)
Data
(Note 1)
-
-
-
-
2
Sector Erase
(4-kbyte Erase)
555H
AAH
AAAH
55H
555H
80H
555H
AAH
AAAH
55H
SA
(Note 2)
30H
3
Chip Erase
(All Erase)
555H
AAH
AAAH
55H
555H
80H
555H
AAH
AAAH
55H
555H
10H
4
Product ID Entry
555H
AAH
AAAH
55H
555H
90H
-
-
-
-
-
-
5
Product ID Exit
XXH
F0H
-
-
-
-
-
-
-
-
-
-
Product ID Exit
555H
AAH
AAAH
55H
555H
F0H
-
-
-
-
-
-
6
Read Protect
555H
AAH
AAAH
55H
555H
A5H
FF7FH
00H
-
-
-
-
相關PDF資料 |
PDF描述 |
|---|---|
| TMP86FH12MG | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 36.4 to 38.0; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 |
| TMP86FH46ANG | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 2.6 to 2.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 |
| TMP86FH46NG | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 2.7 to 2.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 |
| TMP86FH47ADUG | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 2.8 to 3.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 |
| TMP86FH47AUG | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 2.9 to 3.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| TMP86FH09NG(ZM) | 功能描述:8位微控制器 -MCU TLCS870/C 16K FLASH RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數據總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數據 RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT |
| TMP86FH12MG | 制造商:Toshiba America Electronic Components 功能描述:MCU 8BIT TLCS-870 CISC 16KB FLASH 5V 30SSOP - Bulk 制造商:Toshiba America Electronic Components 功能描述:8BIT MCU 16K FLASH 512B RAM 86FH12 |
| TMP86FH12MG(Z) | 功能描述:8位微控制器 -MCU 16k Flash MCU RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數據總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數據 RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT |
| TMP86FH46ANG | 制造商:Toshiba America Electronic Components 功能描述:MCU 8BIT TLCS-870 CISC 16KB FLASH 5V 42PIN SDIP - Bulk |
| TMP86FH46ANG(Z) | 功能描述:8位微控制器 -MCU 16K Flash MCU RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數據總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數據 RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT |
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