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參數(shù)資料
| 型號(hào)： | TISP8200MDR |
| 廠商： | POWER INNOVATIONS LTD |
| 元件分類(lèi)： | 保護(hù)電路 |
| 英文描述： | COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION |
| 中文描述： | TELECOM, SURGE PROTECTION CIRCUIT, PDSO8 |
| 封裝： | PLASTIC, SOP-8 |
| 文件頁(yè)數(shù)： | 4/13頁(yè) |
| 文件大?。?/td> | 335K |
| 代理商： | TISP8200MDR |
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MAY 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP8200M & TISP8201M
Electrical Characteristics for TISP8200M, TA = 25
°
C (Unless Otherwise Noted)
Thermal Characteristics
Parameter
Test Conditions
Min
Typ
Max
Unit
I
D
Off-state current
V
D
= V
DRM
, V
GK
= 0
T
J
= 0
°
C
T
J
= 85
°
C
T
J
= 0
°
C
T
J
= 85
°
C
-5
μ
A
-50
μ
A
I
R
Reverse current
V
R
= V
RRM
, V
GA
= -70 V
5
μ
A
50
μ
A
V
(BO)
V
(BO)
I
H
I
GT
Breakover voltage
dv/dt = -250 V/ms, Source Resistance = 300
, V
GA
= -80 V
2/10 waveshape, (I
K
) I
T
= -100 A, di/dt
max.
= -58 A/
μ
s, V
GA
= -80 V
(I
K
) I
T
= -1 A, di/dt = 1 A/ms, V
GA
= -80 V
(I
K
) I
T
= -5 A, t
p(g)
≥
20
μ
s, V
GA
= -80 V
-82
V
Breakover voltage
-95
V
Holding current
-150
mA
Gate trigger current
5
mA
C
off
Off-state capacitance
f = 1 MHz, V
d
= 1 V, V
GA
= -80 V, (see Note 4)
V
D
= 0
V
D
= -5 V
V
D
= -50 V
35
pF
20
10
NOTE
4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Electrical Characteristics for TISP8201M, TA = 25
°
C (Unless Otherwise Noted)
Parameter
Test Conditions
Min
Typ
Max
Unit
I
D
Off-state current
V
D
= V
DRM
, V
GA
= 0
T
J
= 0
°
C
T
J
= 85
°
C
T
J
= 0
°
C
T
J
= 85
°
C
5
μ
A
50
μ
A
I
R
Reverse current
V
R
= V
RRM
, V
GK
= 70 V
-5
μ
A
-50
μ
A
V
(BO)
V
(BO)
I
H
I
GT
Breakover voltage
dv/dt = 250 V/ms, Source Resistance = 300
, V
GK
= 80 V
2/10 waveshape, (I
A
) I
T
= 100 A, di/dt
max.
= 58 A/
μ
s, V
GK
= 80 V
(I
A
) I
T
= 1 A, di/dt = -1 A/ms, V
GK
= 80 V
(I
A
) I
T
= 5 A, t
p(g)
≥
20
μ
s, V
GK
= 80 V
82
V
Breakover voltage
95
V
Holding current
+20
mA
Gate trigger current
-5
mA
C
off
Off-state capacitance
f = 1 MHz, V
d
= 1 V, V
GK
= 80 V, (see Note 4)
V
D
= 0
V
D
= 5 V
V
D
= 50 V
35
pF
20
10
NOTE
4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
Parameter
Test Conditions
Min
Typ
Max
Unit
R
θ
JA
Junction to free air thermal resistance
P
tot
= 0.52 W, T
A
= 70
°
C, 5 cm
2
, FR4 PCB
160
°
C/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP8200MDR-S | 功能描述:SCR PROTECTOR - BUFFERED P-GATE PROG. PROT. RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8201HDMR-S | 功能描述:SCR Buffered N-Gate SCR Dual RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8201MDR | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8201MDR-S | 功能描述:SCR PROTECTOR - BUFFERED N-GATE PROG. PROT. RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8210MDR-S | 功能描述:SCR -150mA High Hold current RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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