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參數(shù)資料
| 型號： | TISP8200MDR |
| 廠商： | POWER INNOVATIONS LTD |
| 元件分類： | 保護電路 |
| 英文描述： | COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION |
| 中文描述： | TELECOM, SURGE PROTECTION CIRCUIT, PDSO8 |
| 封裝： | PLASTIC, SOP-8 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大小： | 335K |
| 代理商： | TISP8200MDR |
MAY 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP8200M & TISP8201M
Recommended Operating Conditions
Absolute Maximum Ratings for TISP8201M, TA = 25
°
C (Unless Otherwise Noted)
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, V
GA
= 0
Repetitive peak reverse voltage, V
GK
= 70 V
Non-repetitive peak on-state pulse current, (see Notes 1 and 2)
V
DRM
V
RRM
120
V
-120
V
I
TSP
A
10/1000
μ
s (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4)
45
5/310
μ
s (ITU-T K.20, K.21& K.45, K.44 open-circuit voltage wave shape 10/700
μ
s)
70
2/10
μ
s (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4)
210
Non-repetitive peak on-state current, 50/60 Hz (see Notes 1, 2 and 3)
I
TSM
A
100 ms
1 s
5 s
300 s
900 s
11
6.5
3.4
1.4
1.3
Non-repetitive peak gate current, 2/10
μ
s pulse, cathode commoned (see Note 1)
I
GSM
T
J
T
stg
-10
A
Junction temperature
-55 to +150
°
C
Storage temperature range
-65 to +150
°
C
NOTES: 1. Initially, the protector must be in thermal equilibrium with -40
°
C
≤
T
J
≤
85
°
C. The surge may be repeated after the device returns
to its initial conditions.
2. These non-repetitive rated currents are peak values. The rated current values may be applied to any cathode-anode terminal pair.
Above 85
°
C, derate linearly to zero at 150
°
C lead temperature.
3. These non-repetitive rated terminal currents are for the TISP8200M and TISP8201M together. Device (A) terminal positive current
values are conducted by the TISP8201M and (K) terminal negative current values by the TISP8200M.
See Figure 10
Min
Typ
Max
Unit
C1, C2
Gate decoupling capacitor
100
220
nF
R1, R2
Series resistance for Telcordia GR-1089-CORE first-level and second-level surge survival
Series resistance for ITU-T K.20, K.21 and K.45 coordination with a 400 V primary protector
15
10
20
20
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP8200MDR-S | 功能描述:SCR PROTECTOR - BUFFERED P-GATE PROG. PROT. RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8201HDMR-S | 功能描述:SCR Buffered N-Gate SCR Dual RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8201MDR | 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8201MDR-S | 功能描述:SCR PROTECTOR - BUFFERED N-GATE PROG. PROT. RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP8210MDR-S | 功能描述:SCR -150mA High Hold current RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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