參數(shù)資料
型號: TISP8200MDR
廠商: POWER INNOVATIONS LTD
元件分類: 保護(hù)電路
英文描述: COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION
中文描述: TELECOM, SURGE PROTECTION CIRCUIT, PDSO8
封裝: PLASTIC, SOP-8
文件頁數(shù): 12/13頁
文件大小: 335K
代理商: TISP8200MDR
MAY 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
MECHANICAL DATA
D008 Plastic Small Outline Package
This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TISP8200M & TISP8201M
NOTES: A. Leads are within 0.25 (0.010) radius of true position at maximum material condition.
B. Body dimensions do not include mold flash or protrusion.
C. Mold flash or protrusion shall not exceed 0.15 (0.006).
D. Lead tips to be planar within
±
0.051 (0.002).
MDXXAAE
5.80 - 6.20
(0.228 - 0.244)
4.80 - 5.00
(0.189 - 0.197)
D008
8
7
6
5
4
3
2
1
3.81 - 4.00
(0.150 - 0.157)
7
°
NOM
3 Places
7
°
NOM
4 Places
4
°
±
4
°
0.28 - 0.79
(0.011 - 0.031)
0.102 - 0.203
(0.004 - 0.008)
8-pin Small Outline Microelectronic Standard
Package MS-012, JEDEC Publication 95
x 45
°
NOM
0.190 - 0.229
(0.0075 - 0.0090)
INDEX
Pin Spacing
1.27
(0.050)
(see Note A)
6 Places
1.35 - 1.75
(0.053 - 0.069)
0.36 - 0.51
(0.014 - 0.020)
8 Places
0.51 - 1.12
(0.020 - 0.044)
0.25 - 0.50
(0.010 - 0.020)
4.60 - 5.21
(0.181 - 0.205)
DIMENSIONS ARE:MI(INCHES)
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TISP8200MDR-S 功能描述:SCR PROTECTOR - BUFFERED P-GATE PROG. PROT. RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP8201HDMR-S 功能描述:SCR Buffered N-Gate SCR Dual RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP8201MDR 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP8201MDR-S 功能描述:SCR PROTECTOR - BUFFERED N-GATE PROG. PROT. RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISP8210MDR-S 功能描述:SCR -150mA High Hold current RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube