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參數資料
| 型號： | TISP61089SD |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| 中文描述： | 雙遠期導電的P -可編程門晶閘管過壓保護 |
| 文件頁數： | 7/16頁 |
| 文件大?。?/td> | 284K |
| 代理商： | TISP61089SD |
P R O D U C T I N F O R M A T I O N
7
JULY 1999
TISP61089S
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
In Figure 6, the positive gate charge (Q
GS
) is about 0.1 μC which, with the 0.1 μF gate decoupling capacitor
used, increased the gate supply by about 1 V (= Q
GS
/C1). This change is just visible on the -72 V gate
voltage, V
BAT
. This increase does not directly add to the protection voltage as the supply voltage change
reaches a maximum at 0.4 μs when the gate current reverses polarity; whereas the protection voltage peaks
at 0.3 μs. In Figure 6, the peak clamping voltage (V
(BO)
) is -77.5 V, an increase of 5.5 V on the nominal gate
supply voltage. This 5.5 V increase is the sum of the supply rail increase at that time, (0.5 V), and the
protection circuits cathode diode to supply rail breakover voltage (5 V). In practice, use of the recommended
220 nF gate decoupling capacitor would give a supply rail increase of 0.25 V and a V
(BO)
value of about
-77.25 V.
application circuit
Figure 7 shows a typical TISP61089S SLIC card protection circuit. The incoming line conductors, Ring (R)
and Tip (T), connect to the relay matrix via the series overcurrent protection. Fusible resistors, fuses and
positive temperature coefficient (PTC) resistors can be used for overcurrent protection. Resistors will reduce
the prospective current from the surge generator for both the TISP61089S and the ring/test protector. The
TISP7xxxF3 protector has the same protection voltage for any terminal pair. This protector is used when the
ring generator configuration may be ground or battery-backed. For dedicated ground-backed ringing
generators, the TISP3xxxF3 gives better protection as its inter-conductor protection voltage is twice the
conductor to ground value.
Figure 6. PROTECTOR FAST IMPULSE CLAMPING AND SWITCHING WAVEFORMS
Time - μs
0.0
0.5
1.0
1.5
V
-80
-60
-40
-20
0
VK
VBAT
Time - μs
0.0
0.5
1.0
1.5
C
-5
-4
-3
-2
-1
0
1
IK
IG
QGS
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相關代理商/技術參數 |
參數描述 |
|---|---|
| TISP61089SDR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61089SDR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61511D | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61511DR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61511DR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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