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參數(shù)資料
| 型號： | TISP61089SD |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| 中文描述： | 雙遠(yuǎn)期導(dǎo)電的P -可編程門晶閘管過壓保護(hù) |
| 文件頁數(shù)： | 5/16頁 |
| 文件大?。?/td> | 284K |
| 代理商： | TISP61089SD |
P R O D U C T I N F O R M A T I O N
5
JULY 1999
TISP61089S
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
THERMAL INFORMATION
APPLICATIONS INFORMATION
gated protectors
This section covers three topics. Firstly, it is explained why gated protectors are needed. Second, the voltage
limiting action of the protector is described. Third, an example application circuit is described.
purpose of gated protectors
Fixed voltage thyristor overvoltage protectors have been used since the early 1980s to protect monolithic
SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c.
power contact and induction. As the SLIC was usually powered from a fixed voltage negative supply rail, the
limiting voltage of the protector could also be a fixed value. The TISP1072F3 is a typical example of a fixed
voltage SLIC protector.
SLICs have become more sophisticated. To minimise power consumption, some designs automatically adjust
the supply voltage, V
BAT
, to a value that is just sufficient to drive the required line current. For short lines the
supply voltage would be set low, but for long lines, a higher supply voltage would be generated to drive
sufficient line current. The optimum protection for this type of SLIC would be given by a protection voltage
which tracks the SLIC supply voltage. This can be achieved by connecting the protection thyristor gate to the
SLIC supply, Figure 3. This gated (programmable) protection arrangement minimises the voltage stress on
the SLIC, no matter what value of supply voltage.
Figure 2. NON-REPETITIVE PEAK ON-STATE CURRENT AGAINST DURATION
PEAK NON-RECURRING A.C.
vs
CURRENT DURATION
t - Current Duration - s
0·1
1
10
100
1000
I
T
1
10
TI6LACA
V
G
= -48 V, T
AMB
= 85°C
R
GEN
= 70 to 950
V
GEN
= 600 Vrms
RING AND TIP CONNECTIONS -
I
TSM
applied simultaneously to both
GROUND CONNECTION -
Return current is twice I
TSM
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| TISP61089SDR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61089SDR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61511D | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61511DR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61511DR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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