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參數(shù)資料
| 型號： | TISP61089SD |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| 中文描述： | 雙遠期導(dǎo)電的P -可編程門晶閘管過壓保護 |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 284K |
| 代理商： | TISP61089SD |
TISP61089S
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
JULY 1999
2
P R O D U C T I N F O R M A T I O N
the protector will crowbar into a low voltage on-state condition. As the overvoltage subsides the high holding
current of the crowbar prevents d.c. latchup.
The TISP61089S is intended to be used with a series combination of a 25
or higher resistance and a
suitable overcurrent protector. Power fault compliance requires the series overcurrent element to open-circuit
or become high impedance (see Applications Information). For equipment compliant to ITU-T
recommendations K20 or K21 only, the series resistor value is set by the power cross requirements. For K20
and K21, a minimum series resistor value of 10
is recommended.
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high
reliability and in normal system operation they are virtually transparent. The TISP61089S buffered gate
design reduces the loading on the SLIC supply during overvoltages caused by power cross and induction.
The TISP61089S is the TISP61089D with a different pinout. The feed-through Ring (leads 4 — 5) and Tip
(leads 1 — 8) connections have been replaced by single Ring (lead 4) and Tip (lead 1) connections. This
increases package creepage distance of the biased to ground connections from about 0.7 mm to over
3 mm.
NOTES: 1. Initially the protector must be in thermal equilibrium with -40°C
≤
T
J
≤
85°C. The surge may be repeated after the device returns to
its initial conditions.
2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both
terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the
rated current value of an individual terminal pair). Above 85°C, derate linearly to zero at 150°C lead temperature.
absolute maximum ratings
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage, I
G
= 0, -40°C
≤
T
J
≤
85°C
Repetitive peak gate-cathode voltage, V
KA
= 0, -40°C
≤
T
J
≤
85°C
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
V
DRM
V
GKRM
-100
V
-85
V
I
TSP
A
10/1000 μs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4)
5/320 μs (ITU-T recommendation K20 & K21, open-circuit voltage wave shape 10/700)
30
40
1.2/50 μs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4, Alternative)
100
2/10 μs (Bellcore GR-1089-CORE, Issue 1, November 1994, Section 4)
120
Non-repetitive peak on-state current, 60 Hz (see Notes 1 and 2)
I
TSM
A
0.1 s
11
1 s
5 s
300 s
900 s
4.5
2.4
0.95
0.93
Non-repetitive peak gate current, 1/2 μs pulse, cathodes commoned (see Notes 1 and 2)
I
GSM
T
A
T
J
T
stg
40
A
Operating free-air temperature range
-40 to +85
°C
Junction temperature
-40 to +150
°C
Storage temperature range
-40 to +150
°C
recommended operating conditions
MIN
TYP
MAX
UNIT
C
G
Gate decoupling capacitor
100
220
nF
R
S
TISP61089S series resistor for first-level and second-level surge survival
TISP61089S series resistor for first-level surge survival
40
25
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|---|---|
| TISP61089 | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| TISP61089SDR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61089SDR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61511D | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61511DR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| TISP61511DR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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