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| 型號(hào)： | TISP5110H3BJ |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| 中文描述： | 前瞻性導(dǎo)電單向晶閘管過(guò)電壓保護(hù)器 |
| 文件頁(yè)數(shù)： | 9/15頁(yè) |
| 文件大小： | 299K |
| 代理商： | TISP5110H3BJ |
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P R O D U C T I N F O R M A T I O N
9
JANUARY 1998 - REVISED MARCH 1999
TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ
FORWARD-CONDUCTING
UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
broad-band protection.
The star-connection of three TISP5xxxH3BJ protectors gives a protection circuit which has a low differential
capacitance to ground (Figure 13). This example, a -100 V ISDN line is protected. In Figure 13, the circuit
illustration A shows that protector Th1 will be forward biased as it is connected to the most negative potential.
The other two protectors, Th2 and Th3 will be reverse biased as protector Th1 will pull their common
connection to within 0.5 V of the negative voltage supply.
Illustration B shows the equivalent capacitances of the two reverse biased protectors (Th2 and Th3) as 29 pF
each and the capacitance of the forward biased protector (Th1) as 600 pF. Illustration C shows the delta
equivalent of the star capacitances of illustration B. The protector circuit differential capacitance will be 26 - 1
= 25 pF. In this circuit, the differential capacitance value cannot exceed the capacitance value of the ground
protector (Th3).
A bridge circuit can be used for low capacitance differential. Whatever the potential of the ring and tip
conductors are in Figure 14, the array of steering diodes, D1 through to D6, ensure that terminal 1 of
protector Th1 is always positive with respect to terminal 2. The protection voltage will be the sum of the
protector Th1, V
(BO)
, and the forward voltage of the appropriate series diodes. It is important to select the
correct diodes. Diodes D3 through to D6 divert the currents from the ring and tip lines. Diodes D1 and D2 will
carry the sum of the ring and tip currents and so conduct twice the current of the other four diodes. The
diodes need to be specified for forward recovery voltage, V
FRM
, under the expected impulse conditions.
(Some conventional a.c. rectifiers can produce as much as 70 V of forward recovery voltage, which would be
an extra 140 V added to the V
(BO)
of Th1). In principle the bridge circuit can be extended to protect more than
two conductors by adding extra legs to the bridge.
Figure 13. ISDN LOW CAPACITANCE U-INTERFACE PROTECTION
Figure 14. LOW CAPACITANCE BRIDGE PROTECTION CIRCUIT
AI4XAB
C
-99.5 V
29 pF
Th1
Th2
Th3
SIGNAL
C
-99.5 V
C
0.5 V
600 pF
29 pF
26 pF
1 pF
26 pF
A) STAR-CONNECTED
U-INTERFACE
PROTECTOR
B) EQUIVALENT
TISP5150H3BJ
CAPACITANCES
C) DELTA EQUIVALENT
SHOWS 25 pF
LINE UNBALANCE
- 100 V
- 100 V
- 100 V
Th1
RING
AI5XAC
D1
D2
D3
D4
D5
D6
TIP
1
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TISP5150H3BJ | FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP5080H3BJ | FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP61060D | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61060DR | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61060P | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP5110H3BJR | 功能描述:硅對(duì)稱二端開關(guān)元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP5110H3BJR-S | 功能描述:硅對(duì)稱二端開關(guān)元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP5115H3BJ | 制造商:Bourns Inc 功能描述:THYRISTOR TVS UNIDIRECTIONAL 115V |
| TISP5115H3BJR | 功能描述:硅對(duì)稱二端開關(guān)元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP5115H3BJR-S | 功能描述:硅對(duì)稱二端開關(guān)元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
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