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參數(shù)資料
| 型號(hào)： | TISP5110H3BJ |
| 廠(chǎng)商： | Power Innovations International, Inc. |
| 英文描述： | FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| 中文描述： | 前瞻性導(dǎo)電單向晶閘管過(guò)電壓保護(hù)器 |
| 文件頁(yè)數(shù)： | 11/15頁(yè) |
| 文件大?。?/td> | 299K |
| 代理商： | TISP5110H3BJ |
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P R O D U C T I N F O R M A T I O N
11
JANUARY 1998 - REVISED MARCH 1999
TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ
FORWARD-CONDUCTING
UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere. In
some cases it may be necessary to add some extra series resistance to prevent the fuse opening during
impulse testing. The current versus time characteristic of the overcurrent protector must be below the line
shown in Figure 8. In some cases there may be a further time limit imposed by the test standard (e.g. UL
1459 wiring simulator failure).
capacitance
The protector characteristic off-state capacitance values are given for d.c. bias voltage, V
D
, values of -1 V,
-2 V and -50 V. The TISP5150H3BJ is also given for a bias of -100 V. Values for other voltages may be
determined from Figure 6. Up to 10 MHz the capacitance is essentially independent of frequency. Above
10 MHz the effective capacitance is strongly dependent on connection inductance. In Figure 12, the typical
conductor bias voltages will be about -2 V and -50 V. Figure 7 shows the differential (line unbalance)
capacitance caused by biasing one protector at -2 V and the other at -50 V. For example, the TISP5070H3BJ
has a differential capacitance value of 166 pF under these conditions.
normal system voltage levels
The protector should not clip or limit the voltages that occur in normal system operation. Figure 9 allows the
calculation of the protector V
DRM
value at temperatures below 25 °C. The calculated value should not be less
than the maximum normal system voltages. The TISP5150H3BJ, with a V
DRM
of -120 V, can be used to
protect ISDN feed voltages having maximum values of -99 V, -110 V and -115 V (range 3 through to range 5).
These three range voltages represent 0.83 (99/120), 0.92 (110/120) and 0.96 (115/120) of the -120 V
TISP5150H3BJ V
DRM
. Figure 9 shows that the V
DRM
will have decreased to 0.944 of its 25 °C value at
-40 °C. Thus the supply feed voltages of -99 V (0.83) and -110 V (0.92) will not be clipped at temperatures
down to -40 °C. The -115 V (0.96) feed supply may be clipped if the ambient temperature falls below -21 °C.
JESD51 thermal measurement method
To standardise thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51
standard. Part 2 of the standard (JESD51-2, 1995) describes the test environment. This is a 0.0283 m
3
(1 ft
3
)
cube which contains the test PCB (Printed Circuit Board) horizontally mounted at the centre. Part 3 of the
standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for packages smaller
than 27 mm on a side and the other for packages up to 48 mm. The SMBJ measurements used the smaller
76.2 mm x 114.3 mm (3.0 “ x 4.5 “) PCB. The JESD51-3 PCBs are designed to have low effective thermal
conductivity (high thermal resistance) and represent a worse case condition. The PCBs used in the majority
of applications will achieve lower values of thermal resistance and so can dissipate higher power levels than
indicated by the JESD51 values.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TISP5150H3BJ | FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP5080H3BJ | FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
| TISP61060D | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61060DR | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
| TISP61060P | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TISP5110H3BJR | 功能描述:硅對(duì)稱(chēng)二端開(kāi)關(guān)元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP5110H3BJR-S | 功能描述:硅對(duì)稱(chēng)二端開(kāi)關(guān)元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP5115H3BJ | 制造商:Bourns Inc 功能描述:THYRISTOR TVS UNIDIRECTIONAL 115V |
| TISP5115H3BJR | 功能描述:硅對(duì)稱(chēng)二端開(kāi)關(guān)元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TISP5115H3BJR-S | 功能描述:硅對(duì)稱(chēng)二端開(kāi)關(guān)元件 Forward Conducting Unidirectional RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
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