參數(shù)資料
型號(hào): TIM5359-4UL
廠商: Toshiba Corporation
英文描述: MICROWAVE POWER GaAs FET
中文描述: 微波功率GaAs場(chǎng)效應(yīng)管
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 206K
代理商: TIM5359-4UL
T IM5359-4UL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
V
DS
V
GS
I
DS
P
T
T
ch
T
stg
UNIT
RATING
Drain-Source Voltage
V
15
Gate-Source Voltage
V
-5
Drain Current
Total Power Dissipation (Tc= 25
°
C )
Channel Temperature
A
3.5
W
°
C
°
C
25
175
-65 to +175
Storage
PACKAGE OUTLINE (2-11D1B)
Unit in mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260
°
C.
2
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