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參數(shù)資料
| 型號： | TIM5964-30SL |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場效應管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 170K |
| 代理商： | TIM5964-30SL |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM5964-30SL
TECHNICAL DATA
FEAT URES
n
LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Po= 34.5 dBm,
Single Carrier Level
n
HIGH POWER
P1dB=45.0 dBm at 5.9GHz to 6.4GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
I
DS1
Gain Flatness
G
Power Added Efficiency
η
add
3rd Order Intermodulation
Distortion
Drain Current
I
DS2
(Single Carrier Level)
Channel Temperature Rise
Tch
n
HIGH GAIN
G1dB=8.0dB at 5.9GHz to 6.4GHz
n
BROAD BAND INTERNALLY MATCHED FET
n
HERMETICALLY SEALED PACKAGE
CONDITIONS
UNIT
dBm
MIN. TYP. MAX.
44.0
45.0
P
1dB
G
1dB
dB
7.0
8.0
A
dB
%
dBc
-42
7.0
38
-45
8.0
±
0.8
V
DS
=10
V
f
= 5.9 to 6.4GHz
IM
3
Two-Tone Test
Po=34.5 dBm
A
°
C
7.0
8.0
100
(VDS X IDS +Pin – P1dB)
X Rth(c-c)
Recommended gate resistance(Rg) : Rg= 28
W
MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS
Transconductance
SYMBOL
gm
CONDITIONS
V
DS
=
3V
I
DS
= 10A
V
GSoff
V
DS
=
3V
I
DS
= 100mA
I
DSS
V
DS
=
3V
V
GS
= 0V
V
GSO
I
GS
= -350
μ
A
UNIT
mS
MIN. TYP. MAX.
6300
Pinch-off Voltage
V
-1.0
-2.5
-4.0
Saturated Drain Current
A
18
Gate-Source Breakdown
Voltage
Thermal Resistance
V
-5
R
th(c-c)
Channel to Case
°
C/W
1.0
1.3
u
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jun. 2006
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相關代理商/技術參數(shù) |
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|---|---|
| TIM5964-30UL | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED,6GHZ,115W - Trays |
| TIM5964-35SLA | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED,6GHZ,115W - Trays |
| TIM5964-35SLA-251 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:MICROWAVE POWER GaAs FET TIM5964-35SLA-251 |
| TIM5964-35SLA-422 | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED - 6GHZ, 115W - Trays |
| TIM5964-45SL | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR,GAAS FET INTERNALLY MATCHED - 6GHZ, 125W - Trays |
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