- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373640 > TIM1011-5L (Toshiba Corporation) MICROWAVE POWER GaAs FET PDF資料下載
參數(shù)資料
| 型號： | TIM1011-5L |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場效應(yīng)管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 145K |
| 代理商： | TIM1011-5L |
TOSHIBA
MICROWAVE SE MICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM1011-5L
FEAT URE S
HIGH POWER
BROAD BAND INTERNALLY MATCHED
P1dB=37.5dBm at 10.7GHz to 11.7GHz
HIGH GAIN
HERMETICALLY SEALED PACKAGE
G1dB=7.0dB at 10.7GHz to 11.7GHz
RF PERFORMANCE S PECIFICAT IONS ( T a= 25
°
C )
CHARACTERISTICS
SYMBOL
CONDITION
MIN. TYP. MAX. UNIT
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
P
1dB
37.0
37.5
dBm
G
1dB
6.0
7.0
dB
Drain Current
I
DS1
η
add
IM
3
-42
2.0
2.5
A
Power Added Efficiency
V
DS
=
9V
f
=10.7-11.7GHz
23
%
3rd Order Intermodulation
Distortion
-45
dBc
Drain Current
I
DS2
Tch
Two Tone Test
P=26dBm
(Single Carrier Level)
2.0
2.5
A
°
C
Channel Temperature Rise
V
DS
X
I
DS
X
R
th(c-c)
80
ELECT RICAL CHARACT ERIS T ICS ( T a= 25
°
C )
CHARACTERISTICS
Transconductance
SYMBOL
gm
CONDITION
V
DS
=
3V
I
DS
=2.4A
V
DS
=
3V
I
DS
= 72mA
V
DS
=
3V
V
GS
= 0V
I
GS
= -72
μ
A
MIN. TYP. MAX. UNIT
1400
mS
Pinch-off Voltage
V
GSoff
-2.0
-3.5
-5.0
V
Saturated Drain Current
I
DSS
5.0
5.7
A
Gate-Source Breakdown
Voltage
V
GSO
-5
V
Thermal Resistance
R
th(c-c)
Channel to Case
3.0
3.7
°
C/W
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No
license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
T OS HIBA CORPORAT ION
Apr. 2000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TIM1011-8L | MICROWAVE POWER GaAs FET |
| TIM1213-4L | Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band) |
| TIM1213-5 | MICROWAVE POWER GaAs FET |
| TIM1314-30L | MICROWAVE POWER GaAs FET |
| TIM1414-10LA | MICROWAVE POWER GaAs FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TIM1011-8L | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR, GAAS FET INTERNALLY MATCHED, 11GHZ, 60W - Trays |
| TIM1011-8UL | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR, GAAS FET INTERNALLY MATCHED, 11GHZ, 60W - Trays |
| TIM104K035P0X | 功能描述:鉭質(zhì)電容器-固體鉛 0.1uF 35Volts RoHS:否 制造商:Kemet 電容:100 uF 電壓額定值:60 V ESR:100 mOhms 容差:10 % 端接類型:Axial 工作溫度范圍:- 55 C to + 105 C 尺寸:7.92 mm Dia. x 16.28 mm L 引線間隔: 系列:T550 產(chǎn)品:Tantalum Solid Hermetically Sealed 封裝:Tray |
| TIM104K050P0X | 功能描述:鉭質(zhì)電容器-固體鉛 0.1uF 50Volts RoHS:否 制造商:Kemet 電容:100 uF 電壓額定值:60 V ESR:100 mOhms 容差:10 % 端接類型:Axial 工作溫度范圍:- 55 C to + 105 C 尺寸:7.92 mm Dia. x 16.28 mm L 引線間隔: 系列:T550 產(chǎn)品:Tantalum Solid Hermetically Sealed 封裝:Tray |
| TIM105K025P0X | 制造商:CORNELL DUBILIER ELECTRONICS 功能描述:Cap Tant Solid 1uF 25V 10% (7.24 X 4.32 X 5.71mm) Radial 5.08mm 125°C T/R |
發(fā)布緊急采購，3分鐘左右您將得到回復。