參數(shù)資料
型號(hào)： TIM1011-8L
廠商： Toshiba Corporation
英文描述： MICROWAVE POWER GaAs FET
中文描述： 微波功率GaAs場(chǎng)效應(yīng)管
文件頁數(shù)： 1/4頁
文件大?。?/td> 141K
代理商： TIM1011-8L
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM1011-8L
TECHNICAL DATA
FEAT URES
LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Pout= 28.0dBm
Single Carrier Level
HIGH POWER
P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
HIGH GAIN
G1dB=6.0 dB at 10.7 GHz to 11.7 GHz
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Power Added Efficiency
3
rd
Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
SYMBOL
P
1dB
CONDITIONS
UNIT
dBm
MIN. TYP.
38.5
MAX.
39.5
G
1dB
dB
5.0
6.0
I
DS1
η
add
IM3
A
%
dBc
-42
3.4
22
-45
4.4
VDS= 9V
f= 10.7 to 11.7GHz
IDS2
Δ
Tch
Two-Tone Test
Po=28. 0dBm
(Single Carrier Level)
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
A
°
C
3.4
4.4
80
Recommended gate resistance(Rg) : Rg= 150
Ω
(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
CHARACTERISTICS
Transconductance
SYMBOL
gm
CONDITIONS
V
DS
=
3V
I
DS
= 4.0 A
V
GSoff
V
DS
=
3V
I
DS
= 120mA
I
DSS
V
DS
=
3V
V
GS
= 0V
V
GSO
I
GS
= -120
μ
A
UNIT
mS
MIN.
TYP.
2400
MAX.
Pinch-off Voltage
V
-2.0
-3.5
-5.0
Saturated Drain Current
A
8.0
Gate-Source Breakdown
Voltage
Thermal Resistance
V
-5
R
th(c-c)
Channel to Case
°
C/W
1.6
2.5
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. May 2007
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TIM1011-8UL 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR, GAAS FET INTERNALLY MATCHED, 11GHZ, 60W - Trays
TIM104K035P0X 功能描述:鉭質(zhì)電容器-固體鉛 0.1uF 35Volts RoHS:否 制造商:Kemet 電容:100 uF 電壓額定值:60 V ESR:100 mOhms 容差:10 % 端接類型:Axial 工作溫度范圍:- 55 C to + 105 C 尺寸:7.92 mm Dia. x 16.28 mm L 引線間隔: 系列:T550 產(chǎn)品:Tantalum Solid Hermetically Sealed 封裝:Tray
TIM104K050P0X 功能描述:鉭質(zhì)電容器-固體鉛 0.1uF 50Volts RoHS:否 制造商:Kemet 電容:100 uF 電壓額定值:60 V ESR:100 mOhms 容差:10 % 端接類型:Axial 工作溫度范圍:- 55 C to + 105 C 尺寸:7.92 mm Dia. x 16.28 mm L 引線間隔: 系列:T550 產(chǎn)品:Tantalum Solid Hermetically Sealed 封裝:Tray
TIM105K025P0X 制造商:CORNELL DUBILIER ELECTRONICS 功能描述:Cap Tant Solid 1uF 25V 10% (7.24 X 4.32 X 5.71mm) Radial 5.08mm 125°C T/R
TIM105K035P0X 功能描述:鉭質(zhì)電容器-固體鉛 1.0uF 35V 10% RoHS:否 制造商:Kemet 電容:100 uF 電壓額定值:60 V ESR:100 mOhms 容差:10 % 端接類型:Axial 工作溫度范圍:- 55 C to + 105 C 尺寸:7.92 mm Dia. x 16.28 mm L 引線間隔: 系列:T550 產(chǎn)品:Tantalum Solid Hermetically Sealed 封裝:Tray
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