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參數(shù)資料
| 型號： | THN6601B |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | NPN SiGe RF TRANSISTOR |
| 中文描述： | npn型硅鍺射頻晶體管 |
| 文件頁數(shù)： | 6/7頁 |
| 文件大?。?/td> | 289K |
| 代理商： | THN6601B |
Page 6 of 7
http://www.tachyonics.co.kr
July 2005.
Rev. 1.0
Specification
THN6601B
□
Evaluation Board (for FRS at 465 MHz)
FR4 glass epoxy; dielectric constant = 4.5, thickness = 0.8 mm
Evaluation board dimension = 45
ⅹ
30 mm
2
□
Test Circuit Schematic Diagram
100 nH
L2
30 nH
L3, L5, L6
5 pF
C11
6.8 nH
L1
7 pF
C8
3 pF
C10, C12
22 pF
C3
12 pF
C2
1 nF
C6
1 uF
C7
8.2 nH
L4
100 pF
C1, C4, C5, C9
Value
Part
VBB
INPUT
OUTPUT
100 nF
1 uF
100 pF
1 nF
22 pF
100 pF
3 pF
7 pF
5 pF
3 pF
8.2 nH
100 pF
30 nH
30 nH
30 nH
12 pF
6.8 nH
30 nH
VCC
C1
C2
C3
C4
C5
C7
C6
C8
C9
C10
C12
L2
L1
L3
L4
L5
L6
C11
:
Air Coil
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