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參數(shù)資料
| 型號(hào)： | THN6601B |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | NPN SiGe RF TRANSISTOR |
| 中文描述： | npn型硅鍺射頻晶體管 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 289K |
| 代理商： | THN6601B |
□
Typical Characteristics ( T
A
= 25
℃
, unless otherwise specified)
Page 3 of 7
http://www.tachyonics.co.kr
July 2005.
Rev. 1.0
Specification
THN6601B
Power Dissipation
vs. Ambient Temperature
DC Current Gain
vs. Collector Current
Collector Current
vs. Base to Emitter Voltage
Reverse Transfer Capacitance
vs. Collector to Base Voltage
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
C
t
Ambient Temperature, T
A
(
o
C)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Base to Emitter Voltage, V
BE
(V)
0
5
10
15
20
25
30
V
CE
= 5 V
C
C
0
2
4
6
8
10
1.0
1.5
2.0
2.5
3.0
3.5
4.0
R
r
Collector to Base Voltage, V
CB
(V)
10
-3
10
-2
10
-1
10
0
0
20
40
60
80
100
120
140
160
V
CE
= 5 V
D
F
Collector Current, I
C
(A)
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