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參數(shù)資料
| 型號(hào)： | THN6601B |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | NPN SiGe RF TRANSISTOR |
| 中文描述： | npn型硅鍺射頻晶體管 |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大小： | 289K |
| 代理商： | THN6601B |
Page 5 of 7
http://www.tachyonics.co.kr
July 2005.
Rev. 1.0
Specification
THN6601B
Output Power or Power Gain Power Gain or Collector Efficiency
vs. Input Power
30
P
OUT
(dBm)
56
≥
11
6
465
CW, class-AB
η
C
(%)
G
P
(dB)
V
CE
(V)
f (MHz)
Operation Mode
vs. Output Power
□
Application Information
RF performance at T
S
≤
60
℃
in common emitter configuration
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
12
14
16
18
f = 465 MHz, V
CE
= 6 V, I
CQ
= 5 mA
P
OUT
G
P
O
O
Input Power, P
IN
(dBm)
P
10
15
20
25
30
35
0
2
4
6
8
10
12
14
16
18
20
0
10
20
30
40
50
60
70
80
90
100
η
C
G
P
f = 465 MHz, V
CE
= 6 V, I
CQ
= 4 mA
P
P
Output Power, P
OUT
(dBm)
η
C
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