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參數(shù)資料
| 型號： | TEA1208T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | High efficiency DC/DC converter |
| 中文描述： | SWITCHING REGULATOR, 330 kHz SWITCHING FREQ-MAX, PDSO8 |
| 封裝： | 3.90 MM, PLASTIC, MS-012, SOT96-1, SO-8 |
| 文件頁數(shù)： | 9/20頁 |
| 文件大?。?/td> | 88K |
| 代理商： | TEA1208T |
2002 Nov 15
9
Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1208T
CHARACTERISTICS
T
amb
=
40 to +80
°
C; all voltages are measured with respect to ground; positive currents flow into the IC; unless
otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Voltage levels
U
P CONVERSION
; pin U/D = LOW
V
I
V
O
V
I(start)
V
I(uvlo)
D
OWN CONVERSION
;
PIN
U/D = HIGH
input voltage
output voltage
start-up input voltage
undervoltage lockout input voltage
V
I(start)
2.80
1.40
1.50
1.60
2.10
5.50
5.50
1.85
2.50
V
V
V
V
I
L
< 62 mA
note 1
V
I
V
O
G
ENERAL
input voltage
output voltage
note 2
2.80
1.30
5.50
5.50
V
V
V
fb
V
wdw
Current levels
feedback input voltage
output voltage window
1.19
1.5
1.24
2.0
1.29
3.0
V
%
PWM mode
I
q
quiescent current on pin 3
down conversion;
V
3
= 3.6 V; note 3
52
65
72
μ
A
I
shdwn
I
LX
current in shut-down mode
maximum continuous current on
pin 4
2
10
0.42
0.30
μ
A
A
A
T
amb
= 60
°
C
T
amb
= 80
°
C
I
lim
= 0.5 to 2.5 A;
note 4
up conversion
down conversion
I
lim
current limit deviation
17.5
17.5
+17.5
+17.5
%
%
Power MOSFETs
R
DSon
drain-to-source on-state resistance
N-type
P-type
0.10
0.10
0.20
0.22
0.30
0.35
Efficiency
η
1
efficiency up conversion
V
I
= 3.6 V; V
O
= 4.6 V;
L1 = 10
μ
H; note 5
I
L
= 1 mA
I
L
= 10 mA
I
L
= 50 mA
I
L
= 100 mA
I
L
= 200 mA
I
L
= 500 mA
88
93
93
94
95
92
%
%
%
%
%
%
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