參數(shù)資料
型號: TEA1208T
廠商: NXP SEMICONDUCTORS
元件分類: 穩(wěn)壓器
英文描述: High efficiency DC/DC converter
中文描述: SWITCHING REGULATOR, 330 kHz SWITCHING FREQ-MAX, PDSO8
封裝: 3.90 MM, PLASTIC, MS-012, SOT96-1, SO-8
文件頁數(shù): 10/20頁
文件大?。?/td> 88K
代理商: TEA1208T
2002 Nov 15
10
Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1208T
Notes
1.
The undervoltage lockout voltage shows wide specification limits since it decreases at increasing temperature. When
the temperature increases, the minimum supply voltage of the digital control part of the IC decreases and therefore
the correct operation of this function is guaranteed over the whole temperature range.
When V
I
is lower than the target output voltage but higher than 2.8 V, the P-type power MOSFET will remain
conducting (100% duty cycle), resulting in V
O
following V
I
.
V
3
is the voltage on pin 3 (UPOUT/DNIN).
The current limit is defined by an external resistor R
lim
(see Section “Current limiting resistors”). Accuracy of the
current limit increases in proportion to the programmed current limiting level.
The specified efficiency is valid when using an output capacitor having an ESR of 0.10
and a 10
μ
H small size
inductor (Coilcraft DT1608C-103).
If the applied HIGH-level voltage is less than V
3
1 V, the quiescent current (l
q
) of the device will increase.
2.
3.
4.
5.
6.
η
2
efficiency down conversion
V
I
= 3.6 V; V
O
= 2.0 V;
L1 = 10
μ
H; note 5
I
L
= 1 mA
I
L
= 10 mA
I
L
= 50 mA
I
L
= 100 mA
I
L
= 200 mA
I
L
= 500 mA
86
91
92
92
93
89
%
%
%
%
%
%
Timing
f
sw
f
sync
switching frequency
synchronization clock input
frequency
response time
PWM mode
220
4
275
6.5
330
20
kHz
MHz
t
res
Temperature
from standby to P
o(max)
50
μ
s
T
amb
T
max
Digital levels
ambient temperature
internal cut-off temperature
40
150
+25
175
+80
200
°
C
°
C
V
lL
LOW-level input voltage
on pins 1, 5 and 8
HIGH-level input voltage
on pin 1
on pins 5 and 8
0
0.4
V
V
IH
note 6
V
3
0.4
0.55V
3
V
3
+ 0.3
V
3
+ 0.3
V
V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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