參數(shù)資料
型號: TDA8931
廠商: NXP Semiconductors N.V.
英文描述: Power comparator 1 X 20 W
中文描述: 功率比較1 × 20瓦
文件頁數(shù): 13/31頁
文件大?。?/td> 165K
代理商: TDA8931
9397 750 13847
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 — 14 January 2004
13 of 31
Philips Semiconductors
TDA8931
Power comparator 1
×
20 W
13. Dynamic characteristics
[1]
Measured in the application board.
Table 10:
V
P
= 22 V; T
amb
= 25
°
C; R
L
= 4
; unless otherwise specified.
Symbol
Parameter
Amplifier; SE channel
P
o(max)
maximum output power
Characteristics
Conditions
Min
Typ
Max
Unit
R
L
= 4
; THD = 10 %
V
P
= 26 V
V
P
= 22 V
R
L
= 8
; THD =10 %
V
P
= 30 V
P
o
= 1 W, f
i
= 1 kHz
Operating mode; inputs
shorted; gain = 20 dB,
AES17 brick wall filter
[1]
21
15
22
16
-
-
W
W
15
16
0.02
128
-
0.1
150
W
%
μ
V
THD
V
n(o)
total harmonic distortion
noise output voltage
[1]
-
[1]
-
G
v(range)
η
gain adjust range
efficiency
[1]
14
20
26
dB
P
o
= 15 W
V
p
= 22 V; R
L
= 4
V
p
= 30 V; R
L
= 8
[1]
87
89
91
-
-
%
%
[1]
89
PWM output: pin OUT (see
Figure 4
)
t
r
output voltage rise time
t
f
output voltage fall time
t
dead
dead time
t
r(LH)
response time of transition from
LOW-to-HIGH
-
-
-
-
-
-
-
-
-
20
20
0
120
100
120
100
150
0.22
-
-
-
-
-
-
-
-
0.3
ns
ns
ns
ns
ns
ns
ns
ns
V
i(dif)
= 70 mV
V
i(dif)
= 3.3 V
V
i(dif)
= 70 mV
V
i(dif)
= 3.3 V
t
r(HL)
response time of transition from
HIGH-to-LOW
t
W(min)
R
DSon
minimum pulse width
drain-source on-state resistance of
output transistor
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