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參數(shù)資料
| 型號： | TD9944 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | Dual N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓240V，低門限2.0V，雙N溝道增強型DMOS場效應(yīng)管) |
| 中文描述： | 雙N溝道增強型場效應(yīng)管垂直的DMOS（擊穿電壓240伏，2.0V的低門限，雙?溝道增強型的DMOS場效應(yīng)管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 26K |
| 代理商： | TD9944 |
9-11
9
TD9944
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Drain-to-Source Breakdown Voltage
240
V
V
GS
= 0V, I
D
= 2mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 4.5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 4.5V, I
D
= 250mA
V
GS
= 10V, I
D
= 0.5A
V
GS
= 10V, I
D
= 0.5A
V
DS
= 25V, I
D
= 0.5A
Gate Threshold Voltage
0.6
2.0
V
Change in V
GS(th)
with Temperature
Gate Body Leakage
-5.0
mV/
°
C
100
nA
Zero Gate Voltage Drain Current
10
μ
A
1.0
mA
I
D(ON)
ON-State Drain Current
0.5
1.9
1.0
2.8
R
DS(ON)
4.0
6.0
4.0
6.0
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
1.4
%/
°
C
300
600
m
Input Capacitance
65
125
Common Source Output Capacitance
35
70
pF
Reverse Transfer Capacitance
10
25
Turn-ON Delay Time
10
Rise Time
10
Turn-OFF Delay Time
20
Fall Time
20
Diode Forward Voltage Drop
1.8
V
V
GS
= 0V, I
SD
= 1.0A
V
GS
= 0V, I
SD
= 1.0A
Reverse Recovery Time
300
ns
Notes:
1.All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
A
Electrical Characteristics
(each device, @ 25
°
C unless otherwise specified)
Static Drain-to-Source
ON-State Resistance
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
V
DD
= 25V,
I
D
= 1.0A,
R
GEN
= 25
ns
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Switching Waveforms and Test Circuit
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