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參數(shù)資料
| 型號： | TD9944 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | Dual N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓240V，低門限2.0V，雙N溝道增強(qiáng)型DMOS場效應(yīng)管) |
| 中文描述： | 雙N溝道增強(qiáng)型場效應(yīng)管垂直的DMOS（擊穿電壓240伏，2.0V的低門限，雙?溝道增強(qiáng)型的DMOS場效應(yīng)管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 26K |
| 代理商： | TD9944 |
9-10
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
1
2
3
4
8
7
6
5
SO-8
top view
TD9944
Low Threshold
Dual N-Channel Enhancement-Mode
Vertical DMOS FETs
BV
DSS
/
BV
DGS
240V
R
DS(ON)
(max)
V
GS(th)
(max)
I
D(ON)
(min)
SO-8
6.0
2.0V
1.0A
TD9944TG
Ordering Information
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
300
°
C
*
Distance of 1.6 mm from case for 10 seconds.
Preliminary
Features
Dual N-channel devices
Low threshold — 2.0V max.
High input impedance
Low input capacitance — 125pF max.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Low Threshold DMOS Technology
These dual low threshold enhancement-mode (normally-off)
transistors utilize a vertical DMOS structure and Supertex's well-
proven silicon-gate manufacturing process. This combination
produces devices with the power handling capabilities of bipolar
transistors and with the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic
of all MOS structures, these devices are free from thermal
runaway and thermally induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Pin Configuration
Order Number/Package
Note: See Package Outline section for dimensions.
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| TD9944 | Dual N-Channel Enhancement-Mode Vertical DMOS FETs |
| TD9944TG | Dual N-Channel Enhancement-Mode Vertical DMOS FETs |
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參數(shù)描述 |
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| TD9944TG | 功能描述:MOSFET 240V 6Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TD9944TG-G | 功能描述:MOSFET 240V 6Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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