參數(shù)資料
型號(hào)： TC55VEM316AXBN
廠商： Toshiba Corporation
英文描述： TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
中文描述： 馬鞍山暫定東芝數(shù)字集成電路硅柵CMOS
文件頁數(shù)： 1/14頁
文件大小： 209K
代理商： TC55VEM316AXBN
TC55VEM316AXBN40,55
2002-07-23 1/14
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
524,288-WORD BY 16-BIT FULL CMOS STATIC RAM
DESCRIPTION
The TC55VEM316AXBN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by
16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to
3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of
3 mA/MHz and a minimum cycle time of 40 ns. It is automatically placed in low-power mode at 0.7
μ
A standby
current (at V
DD
=
3 V, Ta
=
25°C, typical) when chip enable (CE1) is asserted high or (CE2) is asserted low. There
are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and output
enable (OE ) provides fast memory access. Data byte control pin (LB, UB ) provides lower and upper byte access.
This device is well suited to various microprocessor system applications where high speed, low power and battery
backup are required. And, with a guaranteed operating extreme temperature range of
40° to 85°C, the
TC55VEM316AXBN can be used in environments exhibiting extreme temperature conditions. The
TC55VEM316AXBN is available in a plastic 48-ball BGA.
FEATURES
Low-power dissipation
Operating: 9 mW/MHz (typical)
Single power supply voltage of 2.3 to 3.6 V
Power down features usingCE1 and CE2
Data retention supply voltage of 1.5 to 3.6 V
Direct TTL compatibility for all inputs and outputs
Wide operating temperature range of
40° to 85°C
Standby Current (maximum):
3.6 V
3.0 V
10
μ
A
5
μ
A
PIN ASSIGNMENT
(TOP VIEW)
PIN NAMES
48 PIN BGA
A0~A18
Address Inputs
1
CE
, CE2
Chip Enable
R/W
Read/Write Control
OE
Output Enable
LB ,
UB
Data Byte Control
I/O1~I/O16
Data Inputs/Outputs
V
DD
GND
Power
Ground
NC
No Connection
OP*
Option
*
: OP pin must be open or connected to GND.
Access Times:
TC55VEM316AXBN
40
55
Access Time
40 ns
55 ns
1
CE
Access Time
40 ns
55 ns
CE2 Access Time
40 ns
55 ns
OE
Access Time
25 ns
30 ns
Package:
P-TFBGA48-0811-0.75BZ (Weight: g typ)
A
B
C
D
E
F
G
H
1
OE
UB
I/O11
I/O12
I/O13
I/O14
NC
A8
A0
A3
A5
A17
OP
A14
A12
A9
A1
A4
A6
A7
A16
A15
A13
A10
A2
1
CE
I/O2
I/O4
I/O5
I/O6
R/W
A11
CE2
I/O1
I/O3
V
DD
V
SS
I/O7
I/O8
NC
LB
I/O9
I/O10
V
SS
V
DD
I/O15
I/O16
A18
2
3
4
5
6
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TC55VEM316AXBN40 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VEM316AXBN55 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VEM416AXBN55 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
TC55VEM416AXGN55 功能描述:IC SRAM 16MBIT 55NS 48BGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040
TC55VEM416BXGN55 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
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