參數(shù)資料
型號： TC55W800FT
廠商： Toshiba Corporation
英文描述： 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
中文描述： 524,288字由16位/ 1048576字的8位全的CMOS靜態(tài)RAM
文件頁數(shù)： 1/13頁
文件大?。?/td> 188K
代理商： TC55W800FT
TC55W800FT-55,-70
2001-10-03 1/13
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
DESCRIPTION
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
The TC55W800FT is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16
bits/1,048,576 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device
operates from a single 2.3 to 3.3 V power supply. Advanced circuit technology provides both high speed and low
power at an operating current of 3 mA/MHz and a minimum cycle time of 55 ns. It is automatically placed in
low-power mode at 0.5 A standby current (at V
DD
3 V, Ta 25°C, maximum) when chip enable (
CE1
) is asserted
high or (CE2) is asserted low. There are three control inputs.
CE1
and CE2 are used to select the device and for
data retention control, and output enable (
OE
) provides fast memory access. Data byte control pin (
LB
,
UB
)
provides lower and upper byte access. This device is well suited to various microprocessor system applications
where high speed, low power and battery backup are required. And, with a guaranteed operating extreme
temperature range of 40° to 85°C, the TC55W800FT can be used in environments exhibiting extreme temperature
conditions. The TC55W800FT is available in a plastic 48-pin thin-small-outline package (TSOP).
FEATURES
Low-power dissipation
Operating: 9.9 mW/MHz (typical)
Single power supply voltage of 2.3 to 3.3 V
Power down features using
CE1
and CE2
Data retention supply voltage of 1.5 to 3.3 V
Direct TTL compatibility for all inputs and outputs
Wide operating temperature range of 40° to 85°C
Standby Current (maximum):
3.3 V
3.0 V
10 A
5 A
PIN ASSIGNMENT
(TOP VIEW)
PIN NAMES
48 PIN TSOP
A0~A18
Address Inputs (Word Mode)
A-1~A18
Address Inputs (Byte Mode)
1
CE
, CE2
Chip Enable
R/W
Read/Write Control
OE
Output Enable
LB
,
UB
Data Byte Control
I/O1~I/O16
Data Inputs/Outputs
BYTE
Byte ( 8 mode) Enable
V
DD
GND
Power
Ground
NC
No Connection
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Pin Name
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
R/W
CE2
NC
UB
LB
A18
Pin No.
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
Pin Name
A17
A7
A6
A5
A4
A3
A2
A1
A0
1
CE
GND
OE
I/O1
I/O9
I/O2
I/O10
Pin No.
33
34
35
36
37
38
39
40
41
42
43
44
45
I/O16
/A-1
46
47
48
Pin Name
I/O3 I/O11
I/O4 I/O12 V
DD
I/O5
I/O13
I/O6
I/O14
I/O7
I/O15
I/O8
GND
BYTE
A16
Access Times (maximum):
TC55W800FT
-55
-70
Access Time
55 ns
70 ns
1
CE
Access Time
55 ns
70 ns
CE2 Access Time
55 ns
70 ns
OE
Access Time
30 ns
35 ns
Package:
TSOP
Ⅰ
48-P-1220-0.50 (Weight: 0.52 g typ)
(Normal)
25
48
24
1
相關PDF資料
PDF描述
TC55W800XB7 524,288-WORD BY 16-BIT FULL CMOS STATIC RAM
TC55W800XB8 524,288-WORD BY 16-BIT FULL CMOS STATIC RAM
TC57256AD 32,768 WORD x 8 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
TC57256D-70 32,768 WORD x 8 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
TC57256D-85 32,768 WORD x 8 BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
相關代理商/技術參數(shù)
參數(shù)描述
TC55W800FT-55 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TC55W800FT-70 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TC55W800XB7 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:524,288-WORD BY 16-BIT FULL CMOS STATIC RAM
TC55W800XB8 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:524,288-WORD BY 16-BIT FULL CMOS STATIC RAM
TC55YCM416BSGN 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*