參數(shù)資料
型號(hào)： TC55W1600FT
廠商： Toshiba Corporation
英文描述： 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
中文描述： 1,048,576字由16位/ 2097152字的8位全的CMOS靜態(tài)RAM
文件頁(yè)數(shù)： 1/13頁(yè)
文件大?。?/td> 202K
代理商： TC55W1600FT
TC55W1600FT-55,-70
2002-02-12 1/13
1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
DESCRIPTION
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
The TC55W1600FT is a 16,777,216-bit static random access memory (SRAM) organized as 1,048,576 words by 16
bits/2,097,152 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device
operates from a single 2.3 to 3.1 V power supply. Advanced circuit technology provides both high speed and low
power at an operating current of 3 mA/MHz and a minimum cycle time of 55 ns. It is automatically placed in
low-power mode at 0.5
μ
A standby current (at V
DD
=
3.0 V, Ta
=
25°C, maximum) when chip enable (CE1) is
asserted high or (CE2) is asserted low. There are three control inputs. CE1 and CE2 are used to select the device
and for data retention control, and output enable (OE ) provides fast memory access. Data byte control pin (LB,
UB ) provides lower and upper byte access. This device is well suited to various microprocessor system applications
where high speed, low power and battery backup are required. And, with a guaranteed operating range of
40° to
85°C, the TC55W1600FT can be used in environments exhibiting extreme temperature conditions. The
TC55W1600FT is available in a plastic 48-pin thin-small-outline package (TSOP).
FEATURES
Low-power dissipation
Operating: 9.3 mW/MHz (typical)
Single power supply voltage of 2.3 to 3.1 V
Power down features usingCE1 and CE2
Data retention supply voltage of 1.5 to 3.1 V
Direct TTL compatibility for all inputs and outputs
Wide operating temperature range of
40° to 85°C
Standby Current (maximum):
3.1 V
3.0 V
10
μ
A
5
μ
A
PIN ASSIGNMENT
(TOP VIEW)
PIN NAMES
48 PIN TSOP
A0~A19
Address Inputs (Word Mode)
A-1~A19
Address Inputs (Byte Mode)
1
CE
, CE2
Chip Enable
R/W
Read/Write Control
OE
Output Enable
LB ,
UB
Data Byte Control
I/O1~I/O16
Data Inputs/Outputs
Byte (
×
8 mode) Enable
BYTE
V
DD
GND
Power
Ground
NC
No Connection
NU
Not Used (Input)
*
: NU pin must be open or connected to GND.
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Pin Name
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
R/W
CE2
NU
UB
LB
A18
Pin No.
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
Pin Name
A17
A7
A6
A5
A4
A3
A2
A1
A0
1
CE
GND
OE
I/O1
I/O9
I/O2 I/O10
Pin No.
33
34
35
36
37
38
39
40
41
42
43
44
45
I/O16
/A-1
46
47
48
Pin Name
I/O3 I/O11 I/O4 I/O12 V
DD
I/O5 I/O13 I/O6 I/O14 I/O7 I/O15 I/O8
GND
BYTE
A16
Access Times (maximum):
TC55W1600FT
-55
-70
Access Time
55 ns
70 ns
1
CE
Access Time
55 ns
70 ns
CE2 Access Time
55 ns
70 ns
OE
Access Time
30 ns
35 ns
Package:
TSOP
48-P-1220-0.50 (Weight: 0.52 g typ)
(Normal)
25
48
24
1
相關(guān)PDF資料
PDF描述
TC55W1600FT-55 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
TC55W1600FT-70 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
TC55W800FT 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TC55W800XB7 524,288-WORD BY 16-BIT FULL CMOS STATIC RAM
TC55W800XB8 524,288-WORD BY 16-BIT FULL CMOS STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TC55W1600FT-55 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
TC55W1600FT-70 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
TC55W800FT 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TC55W800FT-55 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TC55W800FT-70 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
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