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參數(shù)資料
| 型號： | TC55VCM208ASTN55 |
| 廠商： | Toshiba Corporation |
| 英文描述： | 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM |
| 中文描述： | 524,288 - Word的8位全的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 111K |
| 代理商： | TC55VCM208ASTN55 |
TC55VCM208ASTN40,55
2003-08-11 1/12
524,288-WORD BY 8-BIT FULL CMOS STATIC RAM
DESCRIPTION
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
The TC55VCM208ASTN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by
8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to
3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of
3 mA/MHz and a minimum cycle time of 40 ns. It is automatically placed in low-power mode at 0.7
μ
A standby
current (at V
DD
=
3 V, Ta
=
25°C, typical) when chip enable (
CE1
) is asserted high or (CE2) is asserted low. There
are three control inputs.
CE1
and CE2 are used to select the device and for data retention control, and output
enable (
OE
) provides fast memory access. This device is well suited to various microprocessor system applications
where high speed, low power and battery backup are required. And, with a guaranteed operating extreme
temperature range of
40° to 85°C, the TC55VCM208ASTN can be used in environments exhibiting extreme
temperature conditions. The TC55VCM208ASTN is available in a plastic 40-pin thin-small outline package
(TSOP).
FEATURES
Low-power dissipation
Operating: 9 mW/MHz (typical)
Single power supply voltage of 2.3 to 3.6 V
Power down features using
CE1
and CE2
Data retention supply voltage of 1.5 to 3.6 V
Direct TTL compatibility for all inputs and outputs
Wide operating temperature range of
40° to 85°C
Standby Current (maximum):
3.6 V
3.0 V
10
μ
A
5
μ
A
PIN ASSIGNMENT
(TOP VIEW)
PIN NAMES
40 PIN TSOP
A0~A18
Address Inputs
1
CE , CE2
Chip Enable
R/W
Read/Write Control
OE
Output Enable
LB , UB
Data Byte Control
I/O1~I/O16
Data Inputs/Outputs
V
DD
GND
Power
Ground
NC
No Connection
OP*
Option
*
: OP pin must be open or connected to GND.
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Pin Name
A16
A15
A14
A13
A12
A11
A9
A8
R/W
CE2
OP
NC
A18
A7
A6
A5
A4
A3
A2
A1
Pin No.
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
Pin Name
A0
CE1
GND
OE
I/O1 I/O2 I/O3
I/O4
NC
V
DD
V
DD
I/O5
I/O6
I/O7
I/O8
A10
NC
NC
GND
A17
Access Times:
TC55VCM208ASTN
40
55
Access Time
40 ns
55 ns
1
CE
Access Time
40 ns
55 ns
CE2
Access Time
40 ns
55 ns
OE
Access Time
25 ns
30 ns
Package:
TSOP
40-P-1014-0.50
(Weight:0.30 g typ)
(Normal)
21
40
20
1
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| TC55VCM216ASTN40 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
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| TC55VCM316BTGN55LA | 功能描述:IC SRAM 8MBIT 55NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
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